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A Novel SiC MOSFET Short‐Circuit Protection Method Based on the Gate Charge Characteristic Curves

Fuente: Wiley Open Access

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Detalles Bibliográficos
Autores principales:	Lei Zhang, Susu Yang, Yuhan Liu, Rundong Guo, Zhiyuan Yao, Lei Ren
Formato:	Artículo Open Access
Publicado:	Wiley 2026
Materias:	International Journal of Circuit Theory and Applications
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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