Anisotropic stress observation of 4H‐SiC trench metal‐oxide semiconductor field‐effect transistor test structures by scanning near‐field optical Raman microscope

Fuente: Wiley Open Access

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Bibliographic Details
Main Authors:	Masanobu Yoshikawa, Masataka Murakami, Tomoyuki Ushida, Junichiro Samejima, Kana Mitsuzawa, Nobuhiro Matoba, Minwho Lim, Oleg Rusch, Mathias Rommel
Format:	Artículo Open Access
Published:	Wiley 2024
Subjects:	Journal of Raman Spectroscopy
Online Access:	Acceder al recurso
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