Buchumschlag

Normally‐Off Top‐Gate Self‐Aligned Field‐Effect Transistor Including Crystal InOx Formed by Hydrogen Gas‐Free Sputtering With Channel Length of 3 μm and High Field‐Effect Mobility Over 75 cm 2 /Vs Fabricated through 400°C Process

Fuente: Wiley Open Access

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Bibliographische Detailangaben
Hauptverfasser:	Yukinori Shima, Daisuke Kurosaki, Masami Jincho, Mitsuo Mashiyama, Masahiro Watanabe, Kayo Kumakura, Seiji Yasumoto, Masayoshi Dobashi, Junichi Koezuka, Motoharu Saito, Koji Kusunoki, Shunpei Yamazaki
Format:	Artículo Open Access
Veröffentlicht:	Wiley 2026
Schlagworte:	Journal of the Society for Information Display
Online-Zugang:	Acceder al recurso
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

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