Normally‐Off Top‐Gate Self‐Aligned Field‐Effect Transistor Including Crystal InOx Formed by Hydrogen Gas‐Free Sputtering With Channel Length of 3 μm and High Field‐Effect Mobility Over 75 cm 2 /Vs Fabricated through 400°C Process
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Wiley Open Access
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Artículo Open Access |
| Published: |
Wiley
2026
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| Subjects: | |
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