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| Autori principali: | , , , , |
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| Natura: | Artículo Open Access |
| Pubblicazione: |
Wiley
2024
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| Soggetti: | |
| Accesso online: | https://onlinelibrary.wiley.com/doi/10.1002/mop.34076 |
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Sommario:
- Design of a broadband high‐efficiency extended resistive continuous Class‐B/J power amplifier with novel drain voltage waveforms Xin He Jin Sheng Dong Yong Mu Yang Xin Xu Xian Qi Lin Microwave and Optical Technology Letters AbstractThis article presents an extended resistive continuous broadband Class‐B/J (ERCB/J) power amplifier (PA) that incorporates two newly designed parameters in the drain voltage waveform. The incorporation of these newly designed parameters enables the PA to achieve a lower degradation rate of efficiency and output power over a wide bandwidth. To validate the effectiveness of the proposed method, a PA was designed, fabricated, and measured. The PA adopting commercially available GaN high electron mobility transistor technology operates from 1.0 to 3.0 GHz, exhibiting a fractional bandwidth of 100%. Across this frequency range, the PA delivers more than 39.6 dBm of saturated output power and more than 62% of drain efficiency. The measured results show good agreement with theoretical analysis and simulation, confirming the validity of the proposed method. 10.1002/mop.34076 http://onlinelibrary.wiley.com/termsAndConditions#vor