Impact of Parasitic Conductive Interfaces on the DC and RF Performance of GaN‐on‐GaN HEMTs
Fuente:
Wiley Open Access
Saved in:
| Main Authors: | Amer Bassal, Serguei Chevtchenko, Frank Schnieder, Thomas Flisgen, Olof Bengtsson, Frank Brunner, Oliver Hilt |
|---|---|
| Format: | Artículo Open Access |
| Published: |
Wiley
2025
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
Importance of Scaling in RF GaN HEMTs for Reduction of Surface Traps‐Induced Drain Lag
by: Hossein Yazdani, et al.
Published: (2024)
by: Hossein Yazdani, et al.
Published: (2024)
GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices
by: Frank Brunner, et al.
Published: (2024)
by: Frank Brunner, et al.
Published: (2024)
Schottky Contact Degradation and Dislocations in AlGaN‐GaN HEMTs
by: Yongkun Sin, et al.
Published: (2025)
by: Yongkun Sin, et al.
Published: (2025)
K/Ka‐Band–GaN–High‐Electron‐Mobility Transistors Technology with 700 mS mm−1 Extrinsic Transconductance
by: Hossein Yazdani, et al.
Published: (2024)
by: Hossein Yazdani, et al.
Published: (2024)
Numerical Investigation of Quasi‐Vertical GaN‐on‐Si MOSFET Incorporating AlGaN/GaN Polarization Interface and AlGaN Functional Layer
by: Zijun Lin, et al.
Published: (2026)
by: Zijun Lin, et al.
Published: (2026)
Low Resistivity n‐type GaN Ohmic Contacts on GaN Substrates
by: Adamantia Logotheti, et al.
Published: (2024)
by: Adamantia Logotheti, et al.
Published: (2024)
SiO2‐GaN Interface Improvement by Wet Cleaning and In Situ Annealing for GaN MOS Transistors
by: Mirjam Henn, et al.
Published: (2024)
by: Mirjam Henn, et al.
Published: (2024)
Comparative Analysis of Ni/Ag and Ni/Au Contacts on GaN/AlGaN/GaN Platform
by: Yuanlei Zhang, et al.
Published: (2024)
by: Yuanlei Zhang, et al.
Published: (2024)
Vertical GaN Trench‐MOSFETs Fabricated on Ammonothermally Grown Bulk GaN Substrates
by: Maciej Kamiński, et al.
Published: (2024)
by: Maciej Kamiński, et al.
Published: (2024)
Modeling the Effects of Interface Traps on DC Characteristics in GaN High‐Electron‐Mobility Transistors
by: Amirali Chalechale, et al.
Published: (2025)
by: Amirali Chalechale, et al.
Published: (2025)
Diffusion of Acceptor Metal Impurities from Semi‐Insulating GaN into Undoped GaN Epitaxial Layers
by: Kenji Iso, et al.
Published: (2025)
by: Kenji Iso, et al.
Published: (2025)
Microwave Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistor on Semi‐Insulating Mn‐Doped GaN Substrate
by: Tomoharu Sugino, et al.
Published: (2024)
by: Tomoharu Sugino, et al.
Published: (2024)
Photoluminescence from Defects in Be‐Doped GaN
by: Michael Alexander Reshchikov, et al.
Published: (2025)
by: Michael Alexander Reshchikov, et al.
Published: (2025)
Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures
by: Tetsuya Suemitsu, et al.
Published: (2026)
by: Tetsuya Suemitsu, et al.
Published: (2026)
Device and Noise Performances of AlGaN/GaN High Electron Mobility Transistors with Various GaN Channel Layers Grown on AlN Buffer Layer
by: Ki‐Sik Im, et al.
Published: (2024)
by: Ki‐Sik Im, et al.
Published: (2024)
DC Conductivity and Mobility of a Degenerate Electron Gas in Heavily Doped GaN Crystals at Room Temperature
by: Nikolai A. Poklonski, et al.
Published: (2026)
by: Nikolai A. Poklonski, et al.
Published: (2026)
Presence of High Density Positive Fixed Charges at ALD–Al2O3/GaN (cap) Interface for Efficient Recovery of 2‐DEG in Ultrathin‐Barrier AlGaN/GaN Heterostructure
by: Han Zhang, et al.
Published: (2024)
by: Han Zhang, et al.
Published: (2024)
Temperature Dependence of Electrical Properties of Ammonothermal GaN
by: Liangkun Shen, et al.
Published: (2025)
by: Liangkun Shen, et al.
Published: (2025)
Understanding the Ga Polar n‐GaN Surface after Mg Diffusion Process
by: Simranjit Singh, et al.
Published: (2025)
by: Simranjit Singh, et al.
Published: (2025)
Hole Conduction Mechanism in In–Mg‐Codoped GaN Prepared via Pulsed Sputtering Deposition
by: Aiko Naito, et al.
Published: (2024)
by: Aiko Naito, et al.
Published: (2024)
Polarization‐Engineered GaN‐Based High‐Electron‐Mobility Transistors for High Power RF Applications
by: Yu‐En Jeng, et al.
Published: (2025)
by: Yu‐En Jeng, et al.
Published: (2025)
Optimization of the Al Composition of the p‐AlGaN Electron Blocking Layer in GaInN/GaN Multiquantum‐Shell Nanowire LEDs
by: Yuta Hattori, et al.
Published: (2024)
by: Yuta Hattori, et al.
Published: (2024)
Molecular Beam Epitaxy Growth of GaN/InGaN Heterostructures under In‐Bilayer Stabilized Conditions
by: Joerg Malindretos, et al.
Published: (2024)
by: Joerg Malindretos, et al.
Published: (2024)
Design Strategy of Vertical GaN Power Schottky Barrier Diodes with p‐GaN Junction Termination Extension and Experimental Demonstration of Selective p‐Doping by Implantation
by: Hang Chen, et al.
Published: (2024)
by: Hang Chen, et al.
Published: (2024)
Ga 2 O 3 /(Al)GaN Heterostructures for Next Generation Power Electronics
by: Manijeh Razeghi, et al.
Published: (2026)
by: Manijeh Razeghi, et al.
Published: (2026)
Effect of Ultra‐Thin AlGaN Regrown Layer on the Electrical Properties of ZrO2/AlGaN/GaN Structures
by: Toi Nezu, et al.
Published: (2024)
by: Toi Nezu, et al.
Published: (2024)
Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN High‐Electron‐Mobility Transistors
by: Jing Cai, et al.
Published: (2024)
by: Jing Cai, et al.
Published: (2024)
Overvoltage Failure Process of Cascode GaN Field Effect Transistors
by: Wataru Saito, et al.
Published: (2024)
by: Wataru Saito, et al.
Published: (2024)
Simulating Scaling Effects in Fully Vertical GaN FinFETs
by: Alexander Simko, et al.
Published: (2025)
by: Alexander Simko, et al.
Published: (2025)
Modeling the Optical Efficiency of AlGaN/GaN Light Emission Diodes with 2D Carrier Localization
by: Alexandra Ibanez, et al.
Published: (2025)
by: Alexandra Ibanez, et al.
Published: (2025)
Comparison of the Spatial and Temporal Photoluminescence Dynamics in InGaN/GaN at 365 nm and 430 nm Excitation
by: Kotaro Oikawa, et al.
Published: (2025)
by: Kotaro Oikawa, et al.
Published: (2025)
Electrical Properties of N‐Polar GaN/AlGaN/AlN Grown via Metal‐Organic Vapor Phase Epitaxy
by: Aina Hiyama Zazuli, et al.
Published: (2024)
by: Aina Hiyama Zazuli, et al.
Published: (2024)
Weak Frequency Dispersion of C–V Characteristics of AlGaN/GaN Metal‐Insulator‐Semiconductor Devices Despite High Interface Trap Density
by: Yuchen Deng, et al.
Published: (2025)
by: Yuchen Deng, et al.
Published: (2025)
Raman Imaging Properties and Phonon Dynamics Analysis of GaInN/GaN Heterostructures using a Double Laser System
by: Yoshihiro Ishitani, et al.
Published: (2025)
by: Yoshihiro Ishitani, et al.
Published: (2025)
Future of Power and High‐Speed/RF Electronics with Advanced High‐Performance GaN and Heterogeneous Integration with Silicon CMOS
by: Han Wui Then, et al.
Published: (2026)
by: Han Wui Then, et al.
Published: (2026)
An Ab Initio Study for Oxygen Adsorption Behavior on Polar GaN Surfaces
by: Toru Akiyama, et al.
Published: (2024)
by: Toru Akiyama, et al.
Published: (2024)
Adiabatic Potential for Conformational Change of VGa–VN Complex Defects in GaN
by: Jota Nakamura, et al.
Published: (2024)
by: Jota Nakamura, et al.
Published: (2024)
Analysis and Manufacturing of GaN Trench‐Gate MOSFETs with Thick Bottom Dielectric
by: Chunfeng Hao, et al.
Published: (2024)
by: Chunfeng Hao, et al.
Published: (2024)
Fabrication of Ultralow‐Bevel Angle Mesa Structures for Vertical GaN Devices
by: Jarosław Tarenko, et al.
Published: (2024)
by: Jarosław Tarenko, et al.
Published: (2024)
Causes of Leakage Current in Vertical GaN P–N Diode under Reverse Bias
by: Tomoaki Sumi, et al.
Published: (2025)
by: Tomoaki Sumi, et al.
Published: (2025)
Similar Items
-
Importance of Scaling in RF GaN HEMTs for Reduction of Surface Traps‐Induced Drain Lag
by: Hossein Yazdani, et al.
Published: (2024) -
GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices
by: Frank Brunner, et al.
Published: (2024) -
Schottky Contact Degradation and Dislocations in AlGaN‐GaN HEMTs
by: Yongkun Sin, et al.
Published: (2025) -
K/Ka‐Band–GaN–High‐Electron‐Mobility Transistors Technology with 700 mS mm−1 Extrinsic Transconductance
by: Hossein Yazdani, et al.
Published: (2024) -
Numerical Investigation of Quasi‐Vertical GaN‐on‐Si MOSFET Incorporating AlGaN/GaN Polarization Interface and AlGaN Functional Layer
by: Zijun Lin, et al.
Published: (2026)