P‐1.9: Enhanced Stability Under Positive Bias Temperature Stress of Ln‐Doped InZnO Thin Film Transistors Fabricated with Back‐channel‐etch Structure

Fuente: Wiley Open Access

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Bibliographic Details
Main Authors:	Juncheng Xiao, Shimin Ge, Zhixiong Jiang, Dong Yuan, Ce Liang, Miao Xu, Shan Li, Hongyuan Xu, Shengdong Zhang
Format:	Artículo Open Access
Published:	Wiley 2024
Subjects:	SID Symposium Digest of Technical Papers
Online Access:	Acceder al recurso
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