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P‐1.11: Back‐End‐of‐Line Compatible Al‐doped Indium Zinc Oxide Transistors with Excellent Thermal Stability

Fuente: Wiley Open Access

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Detalles Bibliográficos
Autores principales:	Jingye Xie, Jianbing Shi, Junchen Dong, Zongwei Wang, Yimao Cai, Dedong Han, Xing Zhang
Formato:	Artículo Open Access
Publicado:	Wiley 2024
Materias:	SID Symposium Digest of Technical Papers
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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