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30‐2: Hydrogen Contents Controlled Silicon Nitride Passivation Layer for Highly Reliable IGZO Thin Film Transistor

Fuente: Wiley Open Access

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Détails bibliographiques
Auteurs principaux:	Bokyoung Lee, Yongil Kim, Jungho Bang, Seung Hee Nam, Ji Yong Noh, Kwon-Shik Park, Soo Young Yoon
Format:	Artículo Open Access
Publié:	Wiley 2024
Sujets:	SID Symposium Digest of Technical Papers
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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