P‐20: Memory Window and Endurance Improvement of In‐Ga‐Zn‐O‐Based Ferroelectric Thin Film Transistors by Inserting In‐Ga‐Zn‐O Floating Gate
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Wiley Open Access
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| Main Authors: | , , , |
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| Format: | Artículo Open Access |
| Published: |
Wiley
2024
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| Subjects: | |
| Online Access: | |
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| DOI: | 10.1002/sdtp.17819 |
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