P‐20: Memory Window and Endurance Improvement of In‐Ga‐Zn‐O‐Based Ferroelectric Thin Film Transistors by Inserting In‐Ga‐Zn‐O Floating Gate

Ähnliche Einträge

• 22‐3: Negative Capacitance ZAO/ZnO Ferroelectric Thin‐Film Transistor for Neuromorphic Computing
  von: Md Mobaidul Islam, et al.
  Veröffentlicht: (2024)
• P‐21: Post‐Annealing Optimization for Top‐Gate Amorphous In‐Ga‐Zn‐O Thin‐Film Transistors with Atomic‐Layer‐Deposited Ultrathin AlO x Dielectric
  von: Jiye Li, et al.
  Veröffentlicht: (2024)
• 18‐4: Mechanical Stress‐Induced Recoverable and Unrecoverable Deteriorations of Flexible a‐InGaZnO Thin‐Film Transistor
  von: Jilin Li, et al.
  Veröffentlicht: (2024)
• P‐1.18: Analysis of Hump Characteristic under Positive Bias Temperature Stress in Amorphous InGaZnO Thin‐Film Transistors
  von: Xiaoliang Zhou, et al.
  Veröffentlicht: (2025)
• P‐1.6: Junction Resistance and Junction Diffusion Depth in InGaZnO‐based Thin Film Transistors (TFTs) with Thermally induced Source/Drain Region
  von: Zhichao Zhou, et al.
  Veröffentlicht: (2024)