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| Main Authors: | , , , |
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| Format: | Artículo Open Access |
| Published: |
Wiley
2025
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| Subjects: | |
| Online Access: | https://sid.onlinelibrary.wiley.com/doi/10.1002/sdtp.18213 |
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Table of Contents:
- 40‐2: Highly Robust, Dual‐Gate Polycrystalline In 0.7 Ga 0.3 O TFTs by Spray Pyrolysis for Low‐Cost Manufacturing of OLED Display Md. Hasnat Rabbi Seongbok Kang Hansol Jeong Jin Jang SID Symposium Digest of Technical Papers We report dual‐gate polycrystalline (Poly) In 0.7 Ga 0.3 O thin film transistor (TFT) by spray pyrolysis (SP) process. The dual gate TFTs exhibits saturation mobility (µSAT) of ~40.23 cm 2 V ‐1 s 1 with excellent stability under bias and temperature stress (Δ VTH = 0 V for PBTS, ΔVTH = ‐0.1 V for NBTS). Furthermore, a 2.5‐inch OLED display made of SP poly‐In 0.7 Ga 0.3 O has been demonstrated 10.1002/sdtp.18213 http://onlinelibrary.wiley.com/termsAndConditions#vor