Documenti analoghi

• P‐3.7: High‐efficiency TCAD simulation of amorphous oxide thin‐film transistors based on AI algorithm
  di: Hejing Sun, et al.
  Pubblicazione: (2025)
• 48‐3: Prediction of Electrical Properties in LnIZO Thin‐Film Transistors Based on Machine Learning Solutions
  di: Xiaoliang Zhou, et al.
  Pubblicazione: (2025)
• P‐1.38: Mobility Enhancement in Dual‐Gate a‐IZO Thin‐Film Transistors through Low‐Pressure Oxygen Annealing
  di: Yuhan Zhang, et al.
  Pubblicazione: (2025)
• P‐1.18: Analysis of Hump Characteristic under Positive Bias Temperature Stress in Amorphous InGaZnO Thin‐Film Transistors
  di: Xiaoliang Zhou, et al.
  Pubblicazione: (2025)
• 76‐3: TEG Electrical Virtual Measurement and Monitoring Based on Interpretable Machine Learning Method
  di: Peng Li, et al.
  Pubblicazione: (2025)