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| Main Authors: | , , , , , , , , , , |
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| Format: | Artículo Open Access |
| Published: |
Wiley
2025
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| Online Access: | https://sid.onlinelibrary.wiley.com/doi/10.1002/sdtp.18921 |
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| _version_ | 1867008959339036672 |
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| author | Wusheng Li Shi Shu Yang Lv Wenlong Wang Xuan Feng Yang Yue Chuanxiang Xu Shipei Li Renquan Gu Qi Yao Guangcai Yuan |
| author_facet | Wusheng Li Shi Shu Yang Lv Wenlong Wang Xuan Feng Yang Yue Chuanxiang Xu Shipei Li Renquan Gu Qi Yao Guangcai Yuan Wusheng Li Shi Shu Yang Lv Wenlong Wang Xuan Feng Yang Yue Chuanxiang Xu Shipei Li Renquan Gu Qi Yao Guangcai Yuan |
| collection | Wiley Open Access |
| contents | P‐1.16: High mobility channel materials provide support for the integration of logic devices on glass substrates Wusheng Li Shi Shu Yang Lv Wenlong Wang Xuan Feng Yang Yue Chuanxiang Xu Shipei Li Renquan Gu Qi Yao Guangcai Yuan SID Symposium Digest of Technical Papers In this paper, the smart‐cut process is used to realize the Si/SiOx structure on the alkali free glass for display, which can further reduce the power consumption and less heat generation in MLED and AR/VR; The overall process of Si film on glass substrate is as follows: the first step is to implant hydrogen into the silicon wafer with surface oxidation, then transfer the silicon film to the alkali free glass for display by anodic bonding, and the material mobility of the transferred silicon film was tested by Hall effect test equipment. Finally using SOI top silicon with the same smart‐cut process to transfer silicon film as the channel material for TFT, the SOI TFT produced was compared with the LTPS TFT using the same TEG, and the mobility was significantly increased. This provides a promising prospect for the future production and utilization of SiOG TFT. 10.1002/sdtp.18921 http://onlinelibrary.wiley.com/termsAndConditions#vor |
| doi_str_mv | 10.1002/sdtp.18921 |
| format | Artículo Open Access |
| id | wiley_oa_10_1002_sdtp_18921 |
| institution | Wiley Open Access |
| license_str_mv | http://onlinelibrary.wiley.com/termsAndConditions#vor |
| publishDate | 2025 |
| publisher | Wiley |
| record_format | wiley_oa |
| spellingShingle | P‐1.16: High mobility channel materials provide support for the integration of logic devices on glass substrates Wusheng Li Shi Shu Yang Lv Wenlong Wang Xuan Feng Yang Yue Chuanxiang Xu Shipei Li Renquan Gu Qi Yao Guangcai Yuan SID Symposium Digest of Technical Papers P‐1.16: High mobility channel materials provide support for the integration of logic devices on glass substrates Wusheng Li Shi Shu Yang Lv Wenlong Wang Xuan Feng Yang Yue Chuanxiang Xu Shipei Li Renquan Gu Qi Yao Guangcai Yuan SID Symposium Digest of Technical Papers In this paper, the smart‐cut process is used to realize the Si/SiOx structure on the alkali free glass for display, which can further reduce the power consumption and less heat generation in MLED and AR/VR; The overall process of Si film on glass substrate is as follows: the first step is to implant hydrogen into the silicon wafer with surface oxidation, then transfer the silicon film to the alkali free glass for display by anodic bonding, and the material mobility of the transferred silicon film was tested by Hall effect test equipment. Finally using SOI top silicon with the same smart‐cut process to transfer silicon film as the channel material for TFT, the SOI TFT produced was compared with the LTPS TFT using the same TEG, and the mobility was significantly increased. This provides a promising prospect for the future production and utilization of SiOG TFT. 10.1002/sdtp.18921 http://onlinelibrary.wiley.com/termsAndConditions#vor |
| title | P‐1.16: High mobility channel materials provide support for the integration of logic devices on glass substrates |
| topic | SID Symposium Digest of Technical Papers |
| url | https://sid.onlinelibrary.wiley.com/doi/10.1002/sdtp.18921 |