P‐1.25: Non‐Volatile Charge Trap Memory Transistor Employing Indium Tungsten Oxide Thin Film as Active Channel and Charge Trap Layer
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Wiley Open Access
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| Main Authors: | RuiPeng Shen, Zihan Wang, Haojun Chen, Yan Yan, Meng Zhang |
|---|---|
| Format: | Artículo Open Access |
| Published: |
Wiley
2025
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