P‐1.25: Non‐Volatile Charge Trap Memory Transistor Employing Indium Tungsten Oxide Thin Film as Active Channel and Charge Trap Layer

Fuente: Wiley Open Access
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Bibliographic Details
Main Authors: RuiPeng Shen, Zihan Wang, Haojun Chen, Yan Yan, Meng Zhang
Format: Artículo Open Access
Published: Wiley 2025
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