P‐1.34: Recent Developments in Vertial Amorphous Oxide Semiconductor (AOS) Thin‐Film Transistor (TFT) Devices
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| Natura: | Artículo Open Access |
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Wiley
2025
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| _version_ | 1867017853042950144 |
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| author | Qianqian Bu Dan Wang Sha Liu Yifan Jia Xiaoling Xu Xianqin Meng Mingxiao Jiang Jun Wu Jida Sun |
| author_facet | Qianqian Bu Dan Wang Sha Liu Yifan Jia Xiaoling Xu Xianqin Meng Mingxiao Jiang Jun Wu Jida Sun Qianqian Bu Dan Wang Sha Liu Yifan Jia Xiaoling Xu Xianqin Meng Mingxiao Jiang Jun Wu Jida Sun |
| collection | Wiley Open Access |
| contents | P‐1.34: Recent Developments in Vertial Amorphous Oxide Semiconductor (AOS) Thin‐Film Transistor (TFT) Devices Qianqian Bu Dan Wang Sha Liu Yifan Jia Xiaoling Xu Xianqin Meng Mingxiao Jiang Jun Wu Jida Sun SID Symposium Digest of Technical Papers With the rapid development of display technologies, the demand for high‐performance thin‐film transistors (TFTs) is increasing day by day. This paper focuses on the latest progress of vertical amorphous oxide semiconductor (AOS) thin‐film transistor (TFT) devices, with an emphasis on key research directions such as device structure, active layer processes, and spacer layer materials. Looking ahead, AOS TFTs are expected to achieve broader applications in the fields of flexible displays, transparent electronics, and large‐area integration. Meanwhile, as the fabrication processes are continuously optimized and new materials are developed, their performance and stability will be further enhanced. 10.1002/sdtp.18939 http://onlinelibrary.wiley.com/termsAndConditions#vor |
| doi_str_mv | 10.1002/sdtp.18939 |
| format | Artículo Open Access |
| id | wiley_oa_10_1002_sdtp_18939 |
| institution | Wiley Open Access |
| license_str_mv | http://onlinelibrary.wiley.com/termsAndConditions#vor |
| publishDate | 2025 |
| publisher | Wiley |
| record_format | wiley_oa |
| spellingShingle | P‐1.34: Recent Developments in Vertial Amorphous Oxide Semiconductor (AOS) Thin‐Film Transistor (TFT) Devices Qianqian Bu Dan Wang Sha Liu Yifan Jia Xiaoling Xu Xianqin Meng Mingxiao Jiang Jun Wu Jida Sun SID Symposium Digest of Technical Papers P‐1.34: Recent Developments in Vertial Amorphous Oxide Semiconductor (AOS) Thin‐Film Transistor (TFT) Devices Qianqian Bu Dan Wang Sha Liu Yifan Jia Xiaoling Xu Xianqin Meng Mingxiao Jiang Jun Wu Jida Sun SID Symposium Digest of Technical Papers With the rapid development of display technologies, the demand for high‐performance thin‐film transistors (TFTs) is increasing day by day. This paper focuses on the latest progress of vertical amorphous oxide semiconductor (AOS) thin‐film transistor (TFT) devices, with an emphasis on key research directions such as device structure, active layer processes, and spacer layer materials. Looking ahead, AOS TFTs are expected to achieve broader applications in the fields of flexible displays, transparent electronics, and large‐area integration. Meanwhile, as the fabrication processes are continuously optimized and new materials are developed, their performance and stability will be further enhanced. 10.1002/sdtp.18939 http://onlinelibrary.wiley.com/termsAndConditions#vor |
| title | P‐1.34: Recent Developments in Vertial Amorphous Oxide Semiconductor (AOS) Thin‐Film Transistor (TFT) Devices |
| topic | SID Symposium Digest of Technical Papers |
| url | https://sid.onlinelibrary.wiley.com/doi/10.1002/sdtp.18939 |