Growth of In x Ga 1−x As Films on GaAs (100): Inserting an Ultrathin In x Ga 1−x As Buffer Using a Surface Technology

Documenti analoghi

• A Family of Sodium Solid‐State Electrolytes Based on the NaGa x Al 1‐x Cl 4 Solid Solution
  di: Hao Guo, et al.
  Pubblicazione: (2026)
• Influence of aluminum addition on structure, hardness, and oxidation resistance of Ta 1−x Al x N thin films
  di: Jonh Yago Erikson Santos, et al.
  Pubblicazione: (2024)
• The x‐ and y‐Symmetrization of XPS Spectra, and the Creation of Models From x‐Symmetrized Spectra for the Visually Impaired
  di: Alvaro J. Lizarbe, et al.
  Pubblicazione: (2026)
• Depth profile study of LaAl 1‐x Cr x O 3 /SrTiO 3 ( x  = 0, 0.2, 0.6, and 1) using time of flight secondary ion mass spectrometry (TOF‐SIMS)
  di: Manas Kumar Dalai, et al.
  Pubblicazione: (2024)
• Influence of O, NF 3 , and Impurity Gases on the Lifetime of NEA GaAs Photocathodes: A Theoretical Research
  di: Xiaohua Yu, et al.
  Pubblicazione: (2026)