Enhanced Passivation of Boron‐Doped Polysilicon Passivated Contacts With a Single‐Sided J 0 of 2.8 fA/cm 2 by Dual‐Layer Silicon Oxide Structure

Fuente: Wiley Open Access

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Bibliographic Details
Main Authors:	Lizhen Shui, Lina Ye, Hongyu Zhang, Shengjie Guan, Zhenhai Yang, Huan Pu, Sheshicheng Chen, Haojiang Du, Hongkai Zhou, Na Lin, Mingdun Liao, Wei Liu, Zhiqin Ying, Xi Yang, Chuanxiao Xiao, Hisham Nasser, Eni Muka, Raşit Turan, Zunke Liu, Yuheng Zeng, Jichun Ye
Format:	Artículo Open Access
Published:	Wiley 2026
Subjects:	Small
Online Access:	Acceder al recurso
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