Experimental Analysis of Rayleigh and Sezawa Modes Resonance Frequencies in SAW Devices Manufactured on Sc0.3Al0.7N/Si†
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| Format: | Artículo Open Access |
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Wiley
2024
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| _version_ | 1867016714675290112 |
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| author | Alexandra Nicoloiu George Boldeiu Claudia Nastase Monica Nedelcu Cristina Ciornei Ioana Zdru George Stavrinidis Dan Vasilache Antonis Stavrinidis Adrian Dinescu George Konstantinidis Alexandru Müller |
| author_facet | Alexandra Nicoloiu George Boldeiu Claudia Nastase Monica Nedelcu Cristina Ciornei Ioana Zdru George Stavrinidis Dan Vasilache Antonis Stavrinidis Adrian Dinescu George Konstantinidis Alexandru Müller Alexandra Nicoloiu George Boldeiu Claudia Nastase Monica Nedelcu Cristina Ciornei Ioana Zdru George Stavrinidis Dan Vasilache Antonis Stavrinidis Adrian Dinescu George Konstantinidis Alexandru Müller |
| collection | Wiley Open Access |
| contents | Experimental Analysis of Rayleigh and Sezawa Modes Resonance Frequencies in SAW Devices Manufactured on Sc0.3Al0.7N/Si† Alexandra Nicoloiu George Boldeiu Claudia Nastase Monica Nedelcu Cristina Ciornei Ioana Zdru George Stavrinidis Dan Vasilache Antonis Stavrinidis Adrian Dinescu George Konstantinidis Alexandru Müller IEEJ Transactions on Electrical and Electronic Engineering GHz operating single port SAW resonators have been manufactured on Sc0.3Al0.7N/Si substrate. The thickness of the ScAlN thin layer was 0.8 μm. Advanced nano‐lithographic techniques have been developed for devices manufacturing. Rayleigh and Sezawa modes have been evidenced on Sc0.3Al0.7N/Si structure. The targeted applications are temperature sensors for harsh environmental operations. The sensitivity and temperature coefficient of frequency (TCF) of the manufactured devices have been experimentally determined and analyzed. The mode shapes of the resonances that appear in the devices supported on Sc0.3Al0.7N/Si substrate were evidenced by finite element method (FEM) simulations. A technique that combines FEM with Coupling of Modes (COM) was used for the determination of the resonance frequencies. Simulations performed for the temperature dependence of the resonance frequency led to results close to the experimental ones for the Rayleigh mode as well as for the Sezawa mode for devices supported on Sc0.3Al0.7N/Si substrate. © 2024 Institute of Electrical Engineer of Japan and Wiley Periodicals LLC. 10.1002/tee.24021 http://onlinelibrary.wiley.com/termsAndConditions#vor |
| doi_str_mv | 10.1002/tee.24021 |
| format | Artículo Open Access |
| id | wiley_oa_10_1002_tee_24021 |
| institution | Wiley Open Access |
| license_str_mv | http://onlinelibrary.wiley.com/termsAndConditions#vor |
| publishDate | 2024 |
| publisher | Wiley |
| record_format | wiley_oa |
| spellingShingle | Experimental Analysis of Rayleigh and Sezawa Modes Resonance Frequencies in SAW Devices Manufactured on Sc0.3Al0.7N/Si† Alexandra Nicoloiu George Boldeiu Claudia Nastase Monica Nedelcu Cristina Ciornei Ioana Zdru George Stavrinidis Dan Vasilache Antonis Stavrinidis Adrian Dinescu George Konstantinidis Alexandru Müller IEEJ Transactions on Electrical and Electronic Engineering Experimental Analysis of Rayleigh and Sezawa Modes Resonance Frequencies in SAW Devices Manufactured on Sc0.3Al0.7N/Si† Alexandra Nicoloiu George Boldeiu Claudia Nastase Monica Nedelcu Cristina Ciornei Ioana Zdru George Stavrinidis Dan Vasilache Antonis Stavrinidis Adrian Dinescu George Konstantinidis Alexandru Müller IEEJ Transactions on Electrical and Electronic Engineering GHz operating single port SAW resonators have been manufactured on Sc0.3Al0.7N/Si substrate. The thickness of the ScAlN thin layer was 0.8 μm. Advanced nano‐lithographic techniques have been developed for devices manufacturing. Rayleigh and Sezawa modes have been evidenced on Sc0.3Al0.7N/Si structure. The targeted applications are temperature sensors for harsh environmental operations. The sensitivity and temperature coefficient of frequency (TCF) of the manufactured devices have been experimentally determined and analyzed. The mode shapes of the resonances that appear in the devices supported on Sc0.3Al0.7N/Si substrate were evidenced by finite element method (FEM) simulations. A technique that combines FEM with Coupling of Modes (COM) was used for the determination of the resonance frequencies. Simulations performed for the temperature dependence of the resonance frequency led to results close to the experimental ones for the Rayleigh mode as well as for the Sezawa mode for devices supported on Sc0.3Al0.7N/Si substrate. © 2024 Institute of Electrical Engineer of Japan and Wiley Periodicals LLC. 10.1002/tee.24021 http://onlinelibrary.wiley.com/termsAndConditions#vor |
| title | Experimental Analysis of Rayleigh and Sezawa Modes Resonance Frequencies in SAW Devices Manufactured on Sc0.3Al0.7N/Si† |
| topic | IEEJ Transactions on Electrical and Electronic Engineering |
| url | https://onlinelibrary.wiley.com/doi/10.1002/tee.24021 |