Dielectric behavior of point defects on ferroelectric films for different substrate strains by phase–field simulations

Documenti analoghi

• Molecular dynamics simulations on ferroelectricity of AlN thin films
  di: Binghui Deng, et al.
  Pubblicazione: (2024)
• Stress–strain behavior of Cu on the AMB‐Si 3 N 4 substrate undergoing thermal cycles via in situ strain measurement
  di: Minh Chu Ngo, et al.
  Pubblicazione: (2024)
• Thermoviscoelastic freezing in glass‐to‐metal seals: In situ capturing of the set point and strain entrapment
  di: Keqian Gong, et al.
  Pubblicazione: (2025)
• Influence of defect chemistry on the electromechanical strain properties of BNT–ST‐based ternary systems
  di: Trang An Duong, et al.
  Pubblicazione: (2024)
• Mechanism of interfacial crack initiation in 3D TBCs and the influence of substrate curvature on failure behavior
  di: Jiarui Zhang, et al.
  Pubblicazione: (2025)