Observation of Fully Recoverable Leakage Behaviour in HfO2 Gate Oxide of WS2 2D FETs Induced by Local Mechanical Stress
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| Autores principales: | Vishwakarma, Kavita, Kaczer, Ben, Smets, Quentin, Panarella, Luca, Kruv, Anastasiia, Schram, Tom, Gonzalez, Mario, Orkut Okudur, Oguzhan, Yao, Yao, De Wolf, Ingrid |
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| Formato: | Recurso digital |
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2025
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