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Observation of Fully Recoverable Leakage Behaviour in HfO2 Gate Oxide of WS2 2D FETs Induced by Local Mechanical Stress

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Bibliographic Details
Main Authors:	Vishwakarma, Kavita, Kaczer, Ben, Smets, Quentin, Panarella, Luca, Kruv, Anastasiia, Schram, Tom, Gonzalez, Mario, Orkut Okudur, Oguzhan, Yao, Yao, De Wolf, Ingrid
Format:	Recurso digital
Published:	Zenodo 2025
Online Access:	Acceder al recurso
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