Measurement of Free-Carrier Density in a 1.2 kV SiC Schottky Diode under Overstress Conditions

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Bibliographic Details
Main Authors:	Bonet Isidro, Ferran, Aviñó Salvadó, Oriol, JORDA, Xavier, Perpiñà, Xavier
Format:	Recurso digital
Language:	English
Published:	Zenodo 2025
Subjects:	Free-carrier density Temperature depth-resolved analysis incomplete dopant ionization refractive index gradient
Online Access:	Acceder al recurso
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