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ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires - Data Repository
ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires - Data Repository
Fuente:
Zenodo
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Bibliographic Details
Main Author:
Tiagulskyi, Stanislav
Format:
Recurso digital
Published:
Zenodo
2025
Online Access:
Acceder al recurso
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https://doi.org/10.5281/zenodo.14711957
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