ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires - Data Repository

Fuente: Zenodo
Saved in:
Bibliographic Details
Main Author: Tiagulskyi, Stanislav
Format: Recurso digital
Published: Zenodo 2025
Online Access:
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1866902232458330112
author Tiagulskyi, Stanislav
author_facet Tiagulskyi, Stanislav
contents
format Recurso digital
id zenodo_https___doi_org_10_5281_zenodo_14711957
institution Zenodo
language
publishDate 2025
publisher Zenodo
record_format zenodo
spellingShingle ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires - Data Repository
Tiagulskyi, Stanislav

title ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires - Data Repository
url https://doi.org/10.5281/zenodo.14711957