Optimization of the femto-laser facility in Bilbao for TPA-TCT in SiC

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Auteurs principaux: Vila, Ivan, Quintana San Emeterio, Cristian, Rosich, Diego, Duarte-Campderrós, Jordi, Fernandez Garcia, Marcos, Moll, Michael, Wiehe, Moritz
Format: Recurso digital
Langue:anglais
Publié: Zenodo 2024
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author Vila, Ivan
Quintana San Emeterio, Cristian
Rosich, Diego
Duarte-Campderrós, Jordi
Fernandez Garcia, Marcos
Moll, Michael
Wiehe, Moritz
author_facet Vila, Ivan
Quintana San Emeterio, Cristian
Rosich, Diego
Duarte-Campderrós, Jordi
Fernandez Garcia, Marcos
Moll, Michael
Wiehe, Moritz
contents <p>This contribution reports on the optimization of the femtosecond laser facility in Bilbao for the application of Two-Photon Absorption Transient Current Technique (TPA-TCT) in silicon carbide (SiC) detectors. Originally demonstrated in 2022, TPA-TCT in SiC requires precise beam control and high spatial resolution, which are challenged by systematics such as pointing instabilities and spherical aberrations. Additionally, the talk introduces a proposal for a permanent, user-accessible TPA-TCT test stand for wide bandgap semiconductor materials—including SiC, GaN, and diamond—equipped with dynamic stabilization, aberration correction, and rapid sample positioning. This facility is intended to support collaborative detector R&D efforts within the DRD3 framework.</p>
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id zenodo_https___doi_org_10_5281_zenodo_15097739
institution Zenodo
language eng
publishDate 2024
publisher Zenodo
record_format zenodo
spellingShingle Optimization of the femto-laser facility in Bilbao for TPA-TCT in SiC
Vila, Ivan
Quintana San Emeterio, Cristian
Rosich, Diego
Duarte-Campderrós, Jordi
Fernandez Garcia, Marcos
Moll, Michael
Wiehe, Moritz
TPA-TCT
SiC radiation sensors
<p>This contribution reports on the optimization of the femtosecond laser facility in Bilbao for the application of Two-Photon Absorption Transient Current Technique (TPA-TCT) in silicon carbide (SiC) detectors. Originally demonstrated in 2022, TPA-TCT in SiC requires precise beam control and high spatial resolution, which are challenged by systematics such as pointing instabilities and spherical aberrations. Additionally, the talk introduces a proposal for a permanent, user-accessible TPA-TCT test stand for wide bandgap semiconductor materials—including SiC, GaN, and diamond—equipped with dynamic stabilization, aberration correction, and rapid sample positioning. This facility is intended to support collaborative detector R&D efforts within the DRD3 framework.</p>
title Optimization of the femto-laser facility in Bilbao for TPA-TCT in SiC
topic TPA-TCT
SiC radiation sensors
url https://doi.org/10.5281/zenodo.15097739