Relaxation-free athermal states in VO2 for thermal-breach memory
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2025
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| _version_ | 1866901512762949632 |
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| author | Bajaj, Aniket Kundu, Satyaki Sahu, Shikha Shukla, Dinesh Kumar Bansal, Bhavtosh |
| author_facet | Bajaj, Aniket Kundu, Satyaki Sahu, Shikha Shukla, Dinesh Kumar Bansal, Bhavtosh |
| contents | <p>A new kind of memory, termed thermal-breach memory, recently introduced in halide perovskites as<br>a consequence of its athermal metastable states combined with return-point memory. While<br>previously demonstrated at low temperatures (~150 K), we extend this concept to vanadium dioxide<br>(VO₂), which undergoes a metal-insulator transition above room temperature. By quantifying the<br>athermal nature of VO₂’s non-equilibrium states, we show that a 1 K thermal perturbation can be<br>detected through irreversible resistance change of its metastable state, enabling precise thermal<br>sensing. Moreover, the establishment of concept of thermal-breach memory above room<br>temperature broadens the scope of VO₂-based devices from voltage-driven to thermally controlled<br>computing operations.</p> |
| format | Recurso digital |
| id | zenodo_https___doi_org_10_5281_zenodo_15618530 |
| institution | Zenodo |
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| publishDate | 2025 |
| publisher | Zenodo |
| record_format | zenodo |
| spellingShingle | Relaxation-free athermal states in VO2 for thermal-breach memory Bajaj, Aniket Kundu, Satyaki Sahu, Shikha Shukla, Dinesh Kumar Bansal, Bhavtosh <p>A new kind of memory, termed thermal-breach memory, recently introduced in halide perovskites as<br>a consequence of its athermal metastable states combined with return-point memory. While<br>previously demonstrated at low temperatures (~150 K), we extend this concept to vanadium dioxide<br>(VO₂), which undergoes a metal-insulator transition above room temperature. By quantifying the<br>athermal nature of VO₂’s non-equilibrium states, we show that a 1 K thermal perturbation can be<br>detected through irreversible resistance change of its metastable state, enabling precise thermal<br>sensing. Moreover, the establishment of concept of thermal-breach memory above room<br>temperature broadens the scope of VO₂-based devices from voltage-driven to thermally controlled<br>computing operations.</p> |
| title | Relaxation-free athermal states in VO2 for thermal-breach memory |
| url | https://doi.org/10.5281/zenodo.15618530 |