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2025
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| Online Access: | https://doi.org/10.5281/zenodo.16094537 |
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| author | Burrow, Daniel Deveci, Oktay Dragomir, Rares Thomson, Thomas Vera Marun, Ivan |
| author_facet | Burrow, Daniel Deveci, Oktay Dragomir, Rares Thomson, Thomas Vera Marun, Ivan |
| contents | <p>A series of comma separated value (.csv) files containing all experimental data used for our manuscript titled "Ballistic spin transistor in graphene via spin-dependent electron optics". Files are named according to the FIgures they correspond to. Note that all data shown in Figure 3 comes from the same files as the data shown in Figure 2a.</p> <p>Each file has two header rows: </p> <ol> <li>Column name </li> <li>Column units</li> </ol> <p>Explanation of column names:</p> <ul> <li>"V_sweep_x" = Column 1 is always the parameter being swept during the measurement (units of instrument x).</li> <li>"SR830_x_ip" = Lock-in amplifier (labelled x) in-phase channel (units of Volts). Typically used to measure resistances across the device.</li> <li>"SR830_x_oop" = Lock-in amplifier (labelled x) out-of-phase channel (units of Volts). Typically used to measure resistances across the device.</li> <li>"2636A_smux_v" = Source-Meter channel "x" voltage reading (units of Volts). Typically used to apply voltages to the back gate or to magnet power supply. </li> <li>"2636A_smux_i" = Source-Meter channel "x" current reading (units of Amperes). Typically used to apply voltages to the back gate or to magnet power supply. </li> </ul> <p>Device resistances are measured using the lock-in amplifier with an output voltage of 1-5 V, applied across a 1 MOhm limiting resistance, implying an excitation current of 1-5 uA in most experiments. All signals measured by lock-in amplifiers are subject to a 10x pre-amplifier. Resistance can be calculated from the in-phase channel of the lock-in amplifier using Ohms law with the above considerations: R = V/(10*I). From this, all other parameters (resistivity, conductivity, mobility, mean free path etc.) are derived, as explained in the manuscript and supplementary information.</p> <p>Magnetic field strength is calculated using the source meter voltage column (either channel a or b), in the polynomial equations supplied in file "Electromagnet_Polynomials".</p> |
| format | Recurso digital |
| id | zenodo_https___doi_org_10_5281_zenodo_16094537 |
| institution | Zenodo |
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| publishDate | 2025 |
| publisher | Zenodo |
| record_format | zenodo |
| spellingShingle | Ballistic spin transistor in graphene via spin-dependent electron optics Burrow, Daniel Deveci, Oktay Dragomir, Rares Thomson, Thomas Vera Marun, Ivan <p>A series of comma separated value (.csv) files containing all experimental data used for our manuscript titled "Ballistic spin transistor in graphene via spin-dependent electron optics". Files are named according to the FIgures they correspond to. Note that all data shown in Figure 3 comes from the same files as the data shown in Figure 2a.</p> <p>Each file has two header rows: </p> <ol> <li>Column name </li> <li>Column units</li> </ol> <p>Explanation of column names:</p> <ul> <li>"V_sweep_x" = Column 1 is always the parameter being swept during the measurement (units of instrument x).</li> <li>"SR830_x_ip" = Lock-in amplifier (labelled x) in-phase channel (units of Volts). Typically used to measure resistances across the device.</li> <li>"SR830_x_oop" = Lock-in amplifier (labelled x) out-of-phase channel (units of Volts). Typically used to measure resistances across the device.</li> <li>"2636A_smux_v" = Source-Meter channel "x" voltage reading (units of Volts). Typically used to apply voltages to the back gate or to magnet power supply. </li> <li>"2636A_smux_i" = Source-Meter channel "x" current reading (units of Amperes). Typically used to apply voltages to the back gate or to magnet power supply. </li> </ul> <p>Device resistances are measured using the lock-in amplifier with an output voltage of 1-5 V, applied across a 1 MOhm limiting resistance, implying an excitation current of 1-5 uA in most experiments. All signals measured by lock-in amplifiers are subject to a 10x pre-amplifier. Resistance can be calculated from the in-phase channel of the lock-in amplifier using Ohms law with the above considerations: R = V/(10*I). From this, all other parameters (resistivity, conductivity, mobility, mean free path etc.) are derived, as explained in the manuscript and supplementary information.</p> <p>Magnetic field strength is calculated using the source meter voltage column (either channel a or b), in the polynomial equations supplied in file "Electromagnet_Polynomials".</p> |
| title | Ballistic spin transistor in graphene via spin-dependent electron optics |
| url | https://doi.org/10.5281/zenodo.16094537 |