Benefits of On-wafer Calibration for RF Characterization of InP DHBT Technology Devices
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| Formato: | Recurso digital |
| Lenguaje: | inglés |
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2025
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| _version_ | 1866902118320832512 |
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| author | CISSE, Moussa Davy, Nil Nodjiadjim, Virginie Ardouin, Bertrand Mismer, Colin Maneux, Cristell Marc, Franc¸ois Deng, Marina |
| author_facet | CISSE, Moussa Davy, Nil Nodjiadjim, Virginie Ardouin, Bertrand Mismer, Colin Maneux, Cristell Marc, Franc¸ois Deng, Marina |
| contents | <p>Abstract—In this study, calibration methods are performed on passive structures up to 110 GHz using off-wafer standards and<br>on-wafer standards. The open and short transistor interconnect measurements are analyzed through a comparison with the<br>electromagnetic (EM) predictive simulation. The results clearly demonstrate the benefits of utilizing on-wafer calibration methods to improve measurement accuracy by significantly reducing the parasitic effects due to the transistor’s interconnects.</p> |
| format | Recurso digital |
| id | zenodo_https___doi_org_10_5281_zenodo_17921949 |
| institution | Zenodo |
| language | eng |
| publishDate | 2025 |
| publisher | Zenodo |
| record_format | zenodo |
| spellingShingle | Benefits of On-wafer Calibration for RF Characterization of InP DHBT Technology Devices CISSE, Moussa Davy, Nil Nodjiadjim, Virginie Ardouin, Bertrand Mismer, Colin Maneux, Cristell Marc, Franc¸ois Deng, Marina RF on-wafer characterization. calibration openshort de-embedding EM simulation bipolar transistors indium phosphide (InP) <p>Abstract—In this study, calibration methods are performed on passive structures up to 110 GHz using off-wafer standards and<br>on-wafer standards. The open and short transistor interconnect measurements are analyzed through a comparison with the<br>electromagnetic (EM) predictive simulation. The results clearly demonstrate the benefits of utilizing on-wafer calibration methods to improve measurement accuracy by significantly reducing the parasitic effects due to the transistor’s interconnects.</p> |
| title | Benefits of On-wafer Calibration for RF Characterization of InP DHBT Technology Devices |
| topic | RF on-wafer characterization. calibration openshort de-embedding EM simulation bipolar transistors indium phosphide (InP) |
| url | https://doi.org/10.5281/zenodo.17921949 |