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| Format: | Recurso digital |
| Langue: | anglais |
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Zenodo
2024
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| Accès en ligne: | https://doi.org/10.5281/zenodo.17984661 |
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| author | Byrareddy H C Chethan M G Parimala K E |
| author_facet | Byrareddy H C Chethan M G Parimala K E |
| contents | <p dir="ltr">As the semiconductor industry approaches the physical and thermal limits of traditional silicon-based bulk MOSFETs, the "More than Moore" and "Beyond CMOS" eras demand a fundamental shift in material science and device architecture. This article provides a rigorous technical analysis of the transition from traditional scaling to the integration of emerging materials such as transition metal dichalcogenides (TMDCs), carbon nanotubes (CNTs), and wide-bandgap semiconductors. We evaluate the electrostatic advantages of Gate-All-Around (GAA) Nanosheets over FinFETs and provide a qualitative analysis of Ferroelectric FETs (FeFETs) for sub-threshold slope optimization. Furthermore, the paper addresses the critical bottleneck of interconnect scaling through the lens of surface scattering phenomena and topological insulators. We conclude with a quantified roadmap for the heterogeneous integration of these technologies into the 2nm node and beyond, focusing on drive current density, parasitic capacitance, and thermal resistance metrics.</p> <p> </p> |
| format | Recurso digital |
| id | zenodo_https___doi_org_10_5281_zenodo_17984661 |
| institution | Zenodo |
| language | eng |
| publishDate | 2024 |
| publisher | Zenodo |
| record_format | zenodo |
| spellingShingle | Emerging Materials and Devices for Future VLSI Technologies. Byrareddy H C Chethan M G Parimala K E VLSI, 2D Materials, GAA Nanosheets, Neuromorphic Computing, FeFETs, Carbon Nanotubes, Heterogeneous Integration, More than Moore, Sub-threshold Swing, Negative Capacitance <p dir="ltr">As the semiconductor industry approaches the physical and thermal limits of traditional silicon-based bulk MOSFETs, the "More than Moore" and "Beyond CMOS" eras demand a fundamental shift in material science and device architecture. This article provides a rigorous technical analysis of the transition from traditional scaling to the integration of emerging materials such as transition metal dichalcogenides (TMDCs), carbon nanotubes (CNTs), and wide-bandgap semiconductors. We evaluate the electrostatic advantages of Gate-All-Around (GAA) Nanosheets over FinFETs and provide a qualitative analysis of Ferroelectric FETs (FeFETs) for sub-threshold slope optimization. Furthermore, the paper addresses the critical bottleneck of interconnect scaling through the lens of surface scattering phenomena and topological insulators. We conclude with a quantified roadmap for the heterogeneous integration of these technologies into the 2nm node and beyond, focusing on drive current density, parasitic capacitance, and thermal resistance metrics.</p> <p> </p> |
| title | Emerging Materials and Devices for Future VLSI Technologies. |
| topic | VLSI, 2D Materials, GAA Nanosheets, Neuromorphic Computing, FeFETs, Carbon Nanotubes, Heterogeneous Integration, More than Moore, Sub-threshold Swing, Negative Capacitance |
| url | https://doi.org/10.5281/zenodo.17984661 |