| _version_ | 1866901211223949312 |
|---|---|
| author | Racki, Igor |
| author_facet | Racki, Igor |
| contents | <p>This work presents an experimentally testable framework in which electrical resistance is interpreted as the accumulated causal response of a system, and dissipation is quantified by the temporal dispersion of that response. Using established tools from linear response theory, noise spectroscopy, and THz impedance measurements, the impulse response kernel can be directly reconstructed and its temporal dispersion measured in real materials such as thin films and nanostructures.</p> <p>To provide a physical mechanism, the framework derives memory kernels from the elimination of inaccessible internal degrees of freedom, yielding generalized Langevin dynamics consistent with nonequilibrium statistical mechanics. A constrained symmetry realization based on a ghost-free internal state coordinate is presented as one explicit effective field theory model, introducing a regulator scale interpreted as the coherence length of the prepared state.</p> <p>The theory is explicitly falsifiable: the same regulator scale must remain consistent across independent experimental domains, including THz transport measurements and precision coherence constraints. All primary predictions can be tested using existing laboratory techniques, making the framework immediately accessible for experimental validation.</p> |
| format | Recurso digital |
| id | zenodo_https___doi_org_10_5281_zenodo_18733668 |
| institution | Zenodo |
| language | |
| publishDate | 2026 |
| publisher | Zenodo |
| record_format | zenodo |
| spellingShingle | The Geometric Origin of Dissipation Resistance as Microscopic Temporal Dispersion Racki, Igor temporal dispersion electrical resistance impedance spectroscopy memory kernel generalized Langevin equation linear response theory THz transport fluctuation–dissipation theorem open quantum systems SO(4,1) symmetry constrained dynamics effective field theory <p>This work presents an experimentally testable framework in which electrical resistance is interpreted as the accumulated causal response of a system, and dissipation is quantified by the temporal dispersion of that response. Using established tools from linear response theory, noise spectroscopy, and THz impedance measurements, the impulse response kernel can be directly reconstructed and its temporal dispersion measured in real materials such as thin films and nanostructures.</p> <p>To provide a physical mechanism, the framework derives memory kernels from the elimination of inaccessible internal degrees of freedom, yielding generalized Langevin dynamics consistent with nonequilibrium statistical mechanics. A constrained symmetry realization based on a ghost-free internal state coordinate is presented as one explicit effective field theory model, introducing a regulator scale interpreted as the coherence length of the prepared state.</p> <p>The theory is explicitly falsifiable: the same regulator scale must remain consistent across independent experimental domains, including THz transport measurements and precision coherence constraints. All primary predictions can be tested using existing laboratory techniques, making the framework immediately accessible for experimental validation.</p> |
| title | The Geometric Origin of Dissipation Resistance as Microscopic Temporal Dispersion |
| topic | temporal dispersion electrical resistance impedance spectroscopy memory kernel generalized Langevin equation linear response theory THz transport fluctuation–dissipation theorem open quantum systems SO(4,1) symmetry constrained dynamics effective field theory |
| url | https://doi.org/10.5281/zenodo.18733668 |