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Autore principale: IFTIKHAR, LAIBA
Natura: Recurso digital
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Pubblicazione: Zenodo 2026
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Accesso online:https://doi.org/10.5281/zenodo.18929134
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author IFTIKHAR, LAIBA
author_facet IFTIKHAR, LAIBA
contents <p>Semiconductor electronics play a major role in the monitoring and control of critical reactor <br>parameters in nuclear reactor instrumentation systems. Nevertheless, these devices function in <br>high-radiation settings where exposure to neutrons, gamma rays, and mixed-field radiation can <br>eventually impair device performance. The dependability deterioration caused by radiation in <br>semiconductor devices used in nuclear reactor equipment is comprehensively examined in this <br>paper. It discusses damage mechanisms, such as displacement damage and total ionising dose <br>(TID) effects, and looks at how they affect signal processing circuits, amplifiers, and sensors. <br>Additionally addressed are a number of hardening and dependability options, including <br>radiation-hardened-by-design (RHBD) approaches, shielding techniques, and redundancy <br>methods. The study concludes by pointing out research gaps and highlighting new avenues for <br>enhancing electronics' long-term performance and safety in nuclear reactor settings. This work <br>gathers current knowledge in the subject and can be used as a reference by researchers and <br>engineers involved in the design and maintenance of nuclear reactor monitoring systems. </p>
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spellingShingle Radiation-Induced Reliability Degradation in Semiconductor Devices Used in Nuclear Reactor Instrumentation: A Review
IFTIKHAR, LAIBA
Affect/radiation effects
Nuclear reactor instrumentation
Semiconductor devices
Total ionizing dose (TID)
Displacement damage
Radiation-hardened electronics
<p>Semiconductor electronics play a major role in the monitoring and control of critical reactor <br>parameters in nuclear reactor instrumentation systems. Nevertheless, these devices function in <br>high-radiation settings where exposure to neutrons, gamma rays, and mixed-field radiation can <br>eventually impair device performance. The dependability deterioration caused by radiation in <br>semiconductor devices used in nuclear reactor equipment is comprehensively examined in this <br>paper. It discusses damage mechanisms, such as displacement damage and total ionising dose <br>(TID) effects, and looks at how they affect signal processing circuits, amplifiers, and sensors. <br>Additionally addressed are a number of hardening and dependability options, including <br>radiation-hardened-by-design (RHBD) approaches, shielding techniques, and redundancy <br>methods. The study concludes by pointing out research gaps and highlighting new avenues for <br>enhancing electronics' long-term performance and safety in nuclear reactor settings. This work <br>gathers current knowledge in the subject and can be used as a reference by researchers and <br>engineers involved in the design and maintenance of nuclear reactor monitoring systems. </p>
title Radiation-Induced Reliability Degradation in Semiconductor Devices Used in Nuclear Reactor Instrumentation: A Review
topic Affect/radiation effects
Nuclear reactor instrumentation
Semiconductor devices
Total ionizing dose (TID)
Displacement damage
Radiation-hardened electronics
url https://doi.org/10.5281/zenodo.18929134