Search Results - Mathias Rommel
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Anisotropic stress observation of 4H‐SiC trench metal‐oxide semiconductor field‐effect transistor test structures by scanning near‐field optical Raman microscope Autoría: Masanobu Yoshikawa, Masataka Murakami, Tomoyuki Ushida, Junichiro Samejima, Kana Mitsuzawa, Nobuhiro Matoba, Minwho Lim, Oleg Rusch, Mathias Rommel
Published 2024Fuente: Wiley Open AccessTipo de material: Artículo Open AccessAcceso al recurso