Belmoubarik, M., Al-Mahdawi, M., Machado Jr., G., Nozaki, T., Coelho, C., Sahashi, M., & Peng, W. K. (2023). Ferroelectricity driven-resistive switching and Schottky barrier modulation at CoPt/MgZnO interface for non-volatile memories.
Style de citation Chicago (17e éd.)Belmoubarik, Mohamed, Muftah Al-Mahdawi, George Machado Jr., Tomohiro Nozaki, Cláudia Coelho, Masashi Sahashi, et Weng Kung Peng. Ferroelectricity Driven-resistive Switching and Schottky Barrier Modulation at CoPt/MgZnO Interface for Non-volatile Memories. 2023.
Style de citation MLA (9e éd.)Belmoubarik, Mohamed, et al. Ferroelectricity Driven-resistive Switching and Schottky Barrier Modulation at CoPt/MgZnO Interface for Non-volatile Memories. 2023.
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