Saved in:
| Main Authors: | , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2023
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2308.02352 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866913344365002752 |
|---|---|
| author | Li, Zhen-Ze Fan, Hua Wang, Lei Zhang, Xu Zhao, Xin-Jing Yu, Yan-Hao Xu, Yi-Shi Wang, Yi Wang, Xiao-Jie Juodkazis, Saulius Chen, Qi-Dai Sun, Hong-Bo |
| author_facet | Li, Zhen-Ze Fan, Hua Wang, Lei Zhang, Xu Zhao, Xin-Jing Yu, Yan-Hao Xu, Yi-Shi Wang, Yi Wang, Xiao-Jie Juodkazis, Saulius Chen, Qi-Dai Sun, Hong-Bo |
| contents | Laser cutting of semiconductor wafers and transparent dielectrics has become a dominant process in manufacturing industries, encompassing a wide range of applications from flat display panels to microelectronic chips. Limited by the diffraction barrier imposed on the beam width and its longitudinal extend of laser focus, a trade-off must be made between cutting accuracy and aspect ratio in conventional laser processing, with accuracy typically approaching a micron and the aspect ratio on the order of $10^2$. Herein, we propose a method to circumvent this limitation. It is based on the laser modification induced by a back-scattering interference crawling mechanism, which creates a positive feedback for homogenizing longitudinal energy deposition and lateral sub-wavelength light confinement during laser-matter interaction. Consequently, cutting width on the scale of tens of nanometers and aspect ratio $10^3 \sim 10^4$ were simultaneously achieved. We refer to this technique as ``super stealth dicing'', which is validated through numerical simulations, ensuring its broad applicability. It can be applied to various transparent functional solids, such as glass, laser crystal, ferroelectric, and semiconductor, and is elevating the precision of future advanced laser dicing, patterning, and drilling into the nanometric era. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2308_02352 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Super stealth dicing of transparent solids with nanometric precision Li, Zhen-Ze Fan, Hua Wang, Lei Zhang, Xu Zhao, Xin-Jing Yu, Yan-Hao Xu, Yi-Shi Wang, Yi Wang, Xiao-Jie Juodkazis, Saulius Chen, Qi-Dai Sun, Hong-Bo Optics Applied Physics Plasma Physics Laser cutting of semiconductor wafers and transparent dielectrics has become a dominant process in manufacturing industries, encompassing a wide range of applications from flat display panels to microelectronic chips. Limited by the diffraction barrier imposed on the beam width and its longitudinal extend of laser focus, a trade-off must be made between cutting accuracy and aspect ratio in conventional laser processing, with accuracy typically approaching a micron and the aspect ratio on the order of $10^2$. Herein, we propose a method to circumvent this limitation. It is based on the laser modification induced by a back-scattering interference crawling mechanism, which creates a positive feedback for homogenizing longitudinal energy deposition and lateral sub-wavelength light confinement during laser-matter interaction. Consequently, cutting width on the scale of tens of nanometers and aspect ratio $10^3 \sim 10^4$ were simultaneously achieved. We refer to this technique as ``super stealth dicing'', which is validated through numerical simulations, ensuring its broad applicability. It can be applied to various transparent functional solids, such as glass, laser crystal, ferroelectric, and semiconductor, and is elevating the precision of future advanced laser dicing, patterning, and drilling into the nanometric era. |
| title | Super stealth dicing of transparent solids with nanometric precision |
| topic | Optics Applied Physics Plasma Physics |
| url | https://arxiv.org/abs/2308.02352 |