Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Preprint |
| Published: |
2024
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2401.14507 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866913277629431808 |
|---|---|
| author | Yarragolla, Sahitya Hemke, Torben Trieschmann, Jan Mussenbrock, Thomas |
| author_facet | Yarragolla, Sahitya Hemke, Torben Trieschmann, Jan Mussenbrock, Thomas |
| contents | A number of memristive devices, mainly ReRAMs, have been reported to exhibit a unique non-zero crossing hysteresis attributed to the interplay of resistive and not yet fully understood `capacitive', and `inductive' effects. This work exploits a kinetic simulation model based on the stochastic cloud-in-a-cell method to capture these effects. The model, applied to Au/BiFeO$_{3}$/Pt/Ti interface-type devices, incorporates vacancy transport and capacitive contributions. The resulting nonlinear response, characterized by hysteresis, is analyzed in detail, providing an in-depth physical understanding of the virtual effects. Capacitive effects are modeled across different layers, revealing their significant role in shaping the non-zero crossing hysteresis behavior. Results from kinetic simulations demonstrate the impact of frequency-dependent impedance on the non-zero crossing phenomenon. This model provides insights into the effects of various device material properties, such as Schottky barrier height, device area and oxide layer on the non-zero crossing point. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2401_14507 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Non-zero crossing current-voltage characteristics of interface-type resistive switching devices Yarragolla, Sahitya Hemke, Torben Trieschmann, Jan Mussenbrock, Thomas Mesoscale and Nanoscale Physics A number of memristive devices, mainly ReRAMs, have been reported to exhibit a unique non-zero crossing hysteresis attributed to the interplay of resistive and not yet fully understood `capacitive', and `inductive' effects. This work exploits a kinetic simulation model based on the stochastic cloud-in-a-cell method to capture these effects. The model, applied to Au/BiFeO$_{3}$/Pt/Ti interface-type devices, incorporates vacancy transport and capacitive contributions. The resulting nonlinear response, characterized by hysteresis, is analyzed in detail, providing an in-depth physical understanding of the virtual effects. Capacitive effects are modeled across different layers, revealing their significant role in shaping the non-zero crossing hysteresis behavior. Results from kinetic simulations demonstrate the impact of frequency-dependent impedance on the non-zero crossing phenomenon. This model provides insights into the effects of various device material properties, such as Schottky barrier height, device area and oxide layer on the non-zero crossing point. |
| title | Non-zero crossing current-voltage characteristics of interface-type resistive switching devices |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2401.14507 |