:: Library Catalog

Copertina

Salvato in:

Dettagli Bibliografici
Autori principali:	Fernández-Garrido, S., Redondo-Cubero, A., Gago, R., Bertram, F., Christen, J., Luna, E., Trampert, A., Pereiro, J., Muñoz, E., Calleja, E.
Natura:	Preprint
Pubblicazione:	2024
Soggetti:	Materials Science
Accesso online:	https://arxiv.org/abs/2402.00581
Tags:	Aggiungi Tag Nessun Tag, puoi essere il primo ad aggiungerne!!

Documenti analoghi

Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content
di: Fernández-Garrido, S., et al.
Pubblicazione: (2024)

A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy
di: Fernández-Garrido, S., et al.
Pubblicazione: (2024)

Rock-salt ScN(113) layers grown on AlN$(11\bar{2}2)$ by plasma-assisted molecular beam epitaxy
di: Dinh, Duc V., et al.
Pubblicazione: (2025)

Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires
di: John, Philipp, et al.
Pubblicazione: (2023)

Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy
di: Ruiz, M Gómez, et al.
Pubblicazione: (2023)

In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001)GaN
di: Koblmüller, G., et al.
Pubblicazione: (2024)

Electronic transport properties of titanium nitride grown by molecular beam epitaxy
di: Takiguchi, Kosuke, et al.
Pubblicazione: (2025)

Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy
di: Gačević, Ž., et al.
Pubblicazione: (2024)

A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)
di: Fernández-Garrido, S., et al.
Pubblicazione: (2024)

Enhanced optical properties of MoSe$_2$ grown by molecular beam epitaxy on hexagonal boron nitride
di: Vergnaud, C., et al.
Pubblicazione: (2024)

Superconductivity in tin telluride films grown by molecular beam epitaxy
di: Gonzalez, Antonio, et al.
Pubblicazione: (2025)

940-nm VCSELs grown by molecular beam epitaxy on Ge(001)
di: Saddik, Karim Ben, et al.
Pubblicazione: (2026)

Electrical characterization of GaN/ALN heterostructures grown by molecular beam epitaxy on silicon substrates
di: J.B. Rojas-Trigos
Pubblicazione: (2016)

Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy
di: Fernández-Garrido, Sergio, et al.
Pubblicazione: (2024)

A single-phase epitaxially grown ferroelectric perovskite nitride
di: Choi, Songhee, et al.
Pubblicazione: (2024)

Electrically pumped AlGaN edge-emitting UV-B laser diodes grown by molecular beam epitaxy
di: Yu, Huabin, et al.
Pubblicazione: (2026)

Crack-free Sc$_{x}$Al$_{1-x}$N(000$\bar{1}$) layers grown on Si(111) by plasma-assisted molecular beam epitaxy
di: Dinh, Duc V., et al.
Pubblicazione: (2024)

Synthesis of epitaxial TaO$_2$ thin films on Al$_2$O$_3$ by suboxide molecular-beam epitaxy and thermal laser epitaxy
di: Birkhölzer, Yorick A., et al.
Pubblicazione: (2026)

Direct evidence for carbon incorporation on the nitrogen site in AlN
di: Wickramaratne, Darshana, et al.
Pubblicazione: (2024)

Photoreflectance of intrinsic GaAs epitaxial layers grown by LPE with supercooling
di: Alejo-Armenta C., Lopez-Vazquez C., Torres-Delgado G., Mendoza Alvarez J.G. and Alvarado-Gil J.J
Pubblicazione: (1993)

Photoluminescence study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy with in-situ / exsitu growth interruptions
di: M. López López
Pubblicazione: (2001)

Machine-learning interatomic potential for AlN for epitaxial simulation
di: Taormina, Nicholas, et al.
Pubblicazione: (2025)

Optical characterization of Te-doped GaxIn1-xAsySb1-y epitaxial layers grown by liquid phase epitaxy
di: Y. E. Bravo-García
Pubblicazione: (2012)

Growth of compositionally uniform $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with low relaxation degree on GaN by molecular beam epitaxy
di: Kang, Jingxuan, et al.
Pubblicazione: (2024)

Synthesis and crystal structure of three new quaternary compounds in the system (Cu-III-Se2) 1 - x ZnSex (III=Al, Ga, In), formed by Zn incorporation in Cu-III-Se2 chalcopyrites
di: G.E. Delgado
Pubblicazione: (2016)

Tracking the creation of single photon emitters in AlN by implantation and annealing
di: Yağcı, H. B., et al.
Pubblicazione: (2025)

Highly efficient individually addressable diode lasers at 830 nm grown by solid source molecular beam epitaxy
di: I. Hernández
Pubblicazione: (2001)

Sputtered AlN buffer layer for low-loss crystalline AlN-on-sapphire integrated photonics
di: Brunetta, Samuele, et al.
Pubblicazione: (2025)

Strain distribution in GaN/AlN superlattices grown on AlN/sapphire templates: comparison of X-ray diffraction and photoluminescence studies
di: Wierzbicka, Aleksandra, et al.
Pubblicazione: (2025)

Evolution of the surface morphology of GaSb epitaxial layers deposited by molecular beam epitaxy (MBE) on GaAs (100) substrates
di: Jarosz, Dawid, et al.
Pubblicazione: (2024)

Tribological performance evidence on ternary and quaternary nitride coatings applied for industrial steel
di: J. C. Caicedo
Pubblicazione: (2013)

Reentrant quantum anomalous Hall effect in molecular beam epitaxy-grown MnBi2Te4 thin films
di: Li, Yuanzhao, et al.
Pubblicazione: (2024)

Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy
di: Brito, Daniel, et al.
Pubblicazione: (2022)

Strongly dispersive dielectric properties of high-ScN-fraction ScAlN deposited by molecular beam epitaxy
di: Gokhale, Vikrant J., et al.
Pubblicazione: (2025)

Controlled epitaxy of room-temperature quantum emitters in gallium nitride
di: Eggleton, Katie M., et al.
Pubblicazione: (2026)

High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN
di: Zettler, J. K., et al.
Pubblicazione: (2024)

In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction
di: Fernández-Garrido, S., et al.
Pubblicazione: (2024)

Application of optical scatterometry to microstructure changes of Si1 xGex/Si heterostructures grown by gas source molecular beam epitaxy
di: L.F. Zou
Pubblicazione: (1999)

Revealing the (111) surface electronic structure of epitaxially grown Na$_2$KSb photocathode
di: Solovova, N. Yu., et al.
Pubblicazione: (2026)

CBVB-nH complexes as prevalent defects in metal-organic vapor-phase epitaxy-grown hexagonal boron nitride
di: Maciaszek, Marek, et al.
Pubblicazione: (2025)