Saved in:
| Main Authors: | Fernández-Garrido, S., Redondo-Cubero, A., Gago, R., Bertram, F., Christen, J., Luna, E., Trampert, A., Pereiro, J., Muñoz, E., Calleja, E. |
|---|---|
| Format: | Preprint |
| Published: |
2024
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2402.00581 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content
by: Fernández-Garrido, S., et al.
Published: (2024)
by: Fernández-Garrido, S., et al.
Published: (2024)
A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy
by: Fernández-Garrido, S., et al.
Published: (2024)
by: Fernández-Garrido, S., et al.
Published: (2024)
Rock-salt ScN(113) layers grown on AlN$(11\bar{2}2)$ by plasma-assisted molecular beam epitaxy
by: Dinh, Duc V., et al.
Published: (2025)
by: Dinh, Duc V., et al.
Published: (2025)
Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires
by: John, Philipp, et al.
Published: (2023)
by: John, Philipp, et al.
Published: (2023)
Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy
by: Ruiz, M Gómez, et al.
Published: (2023)
by: Ruiz, M Gómez, et al.
Published: (2023)
In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001)GaN
by: Koblmüller, G., et al.
Published: (2024)
by: Koblmüller, G., et al.
Published: (2024)
Electronic transport properties of titanium nitride grown by molecular beam epitaxy
by: Takiguchi, Kosuke, et al.
Published: (2025)
by: Takiguchi, Kosuke, et al.
Published: (2025)
Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy
by: Gačević, Ž., et al.
Published: (2024)
by: Gačević, Ž., et al.
Published: (2024)
A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)
by: Fernández-Garrido, S., et al.
Published: (2024)
by: Fernández-Garrido, S., et al.
Published: (2024)
Enhanced optical properties of MoSe$_2$ grown by molecular beam epitaxy on hexagonal boron nitride
by: Vergnaud, C., et al.
Published: (2024)
by: Vergnaud, C., et al.
Published: (2024)
Superconductivity in tin telluride films grown by molecular beam epitaxy
by: Gonzalez, Antonio, et al.
Published: (2025)
by: Gonzalez, Antonio, et al.
Published: (2025)
940-nm VCSELs grown by molecular beam epitaxy on Ge(001)
by: Saddik, Karim Ben, et al.
Published: (2026)
by: Saddik, Karim Ben, et al.
Published: (2026)
Electrical characterization of GaN/ALN heterostructures grown by molecular beam epitaxy on silicon substrates
by: J.B. Rojas-Trigos
Published: (2016)
by: J.B. Rojas-Trigos
Published: (2016)
Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy
by: Fernández-Garrido, Sergio, et al.
Published: (2024)
by: Fernández-Garrido, Sergio, et al.
Published: (2024)
A single-phase epitaxially grown ferroelectric perovskite nitride
by: Choi, Songhee, et al.
Published: (2024)
by: Choi, Songhee, et al.
Published: (2024)
Electrically pumped AlGaN edge-emitting UV-B laser diodes grown by molecular beam epitaxy
by: Yu, Huabin, et al.
Published: (2026)
by: Yu, Huabin, et al.
Published: (2026)
Crack-free Sc$_{x}$Al$_{1-x}$N(000$\bar{1}$) layers grown on Si(111) by plasma-assisted molecular beam epitaxy
by: Dinh, Duc V., et al.
Published: (2024)
by: Dinh, Duc V., et al.
Published: (2024)
Synthesis of epitaxial TaO$_2$ thin films on Al$_2$O$_3$ by suboxide molecular-beam epitaxy and thermal laser epitaxy
by: Birkhölzer, Yorick A., et al.
Published: (2026)
by: Birkhölzer, Yorick A., et al.
Published: (2026)
Direct evidence for carbon incorporation on the nitrogen site in AlN
by: Wickramaratne, Darshana, et al.
Published: (2024)
by: Wickramaratne, Darshana, et al.
Published: (2024)
Photoreflectance of intrinsic GaAs epitaxial layers grown by LPE with supercooling
by: Alejo-Armenta C., Lopez-Vazquez C., Torres-Delgado G., Mendoza Alvarez J.G. and Alvarado-Gil J.J
Published: (1993)
by: Alejo-Armenta C., Lopez-Vazquez C., Torres-Delgado G., Mendoza Alvarez J.G. and Alvarado-Gil J.J
Published: (1993)
Photoluminescence study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy with in-situ / exsitu growth interruptions
by: M. López López
Published: (2001)
by: M. López López
Published: (2001)
Machine-learning interatomic potential for AlN for epitaxial simulation
by: Taormina, Nicholas, et al.
Published: (2025)
by: Taormina, Nicholas, et al.
Published: (2025)
Optical characterization of Te-doped GaxIn1-xAsySb1-y epitaxial layers grown by liquid phase epitaxy
by: Y. E. Bravo-García
Published: (2012)
by: Y. E. Bravo-García
Published: (2012)
Growth of compositionally uniform $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with low relaxation degree on GaN by molecular beam epitaxy
by: Kang, Jingxuan, et al.
Published: (2024)
by: Kang, Jingxuan, et al.
Published: (2024)
Synthesis and crystal structure of three new quaternary compounds in the system (Cu-III-Se2) 1 - x ZnSex (III=Al, Ga, In), formed by Zn incorporation in Cu-III-Se2 chalcopyrites
by: G.E. Delgado
Published: (2016)
by: G.E. Delgado
Published: (2016)
Tracking the creation of single photon emitters in AlN by implantation and annealing
by: Yağcı, H. B., et al.
Published: (2025)
by: Yağcı, H. B., et al.
Published: (2025)
Highly efficient individually addressable diode lasers at 830 nm grown by solid source molecular beam epitaxy
by: I. Hernández
Published: (2001)
by: I. Hernández
Published: (2001)
Sputtered AlN buffer layer for low-loss crystalline AlN-on-sapphire integrated photonics
by: Brunetta, Samuele, et al.
Published: (2025)
by: Brunetta, Samuele, et al.
Published: (2025)
Strain distribution in GaN/AlN superlattices grown on AlN/sapphire templates: comparison of X-ray diffraction and photoluminescence studies
by: Wierzbicka, Aleksandra, et al.
Published: (2025)
by: Wierzbicka, Aleksandra, et al.
Published: (2025)
Evolution of the surface morphology of GaSb epitaxial layers deposited by molecular beam epitaxy (MBE) on GaAs (100) substrates
by: Jarosz, Dawid, et al.
Published: (2024)
by: Jarosz, Dawid, et al.
Published: (2024)
Tribological performance evidence on ternary and quaternary nitride coatings applied for industrial steel
by: J. C. Caicedo
Published: (2013)
by: J. C. Caicedo
Published: (2013)
Reentrant quantum anomalous Hall effect in molecular beam epitaxy-grown MnBi2Te4 thin films
by: Li, Yuanzhao, et al.
Published: (2024)
by: Li, Yuanzhao, et al.
Published: (2024)
Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy
by: Brito, Daniel, et al.
Published: (2022)
by: Brito, Daniel, et al.
Published: (2022)
Strongly dispersive dielectric properties of high-ScN-fraction ScAlN deposited by molecular beam epitaxy
by: Gokhale, Vikrant J., et al.
Published: (2025)
by: Gokhale, Vikrant J., et al.
Published: (2025)
Controlled epitaxy of room-temperature quantum emitters in gallium nitride
by: Eggleton, Katie M., et al.
Published: (2026)
by: Eggleton, Katie M., et al.
Published: (2026)
High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN
by: Zettler, J. K., et al.
Published: (2024)
by: Zettler, J. K., et al.
Published: (2024)
In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction
by: Fernández-Garrido, S., et al.
Published: (2024)
by: Fernández-Garrido, S., et al.
Published: (2024)
Application of optical scatterometry to microstructure changes of Si1 xGex/Si heterostructures grown by gas source molecular beam epitaxy
by: L.F. Zou
Published: (1999)
by: L.F. Zou
Published: (1999)
Revealing the (111) surface electronic structure of epitaxially grown Na$_2$KSb photocathode
by: Solovova, N. Yu., et al.
Published: (2026)
by: Solovova, N. Yu., et al.
Published: (2026)
CBVB-nH complexes as prevalent defects in metal-organic vapor-phase epitaxy-grown hexagonal boron nitride
by: Maciaszek, Marek, et al.
Published: (2025)
by: Maciaszek, Marek, et al.
Published: (2025)
Similar Items
-
Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content
by: Fernández-Garrido, S., et al.
Published: (2024) -
A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy
by: Fernández-Garrido, S., et al.
Published: (2024) -
Rock-salt ScN(113) layers grown on AlN$(11\bar{2}2)$ by plasma-assisted molecular beam epitaxy
by: Dinh, Duc V., et al.
Published: (2025) -
Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires
by: John, Philipp, et al.
Published: (2023) -
Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy
by: Ruiz, M Gómez, et al.
Published: (2023)