Zettler, J. K., Hauswald, C., Corfdir, P., Musolino, M., Geelhaar, L., Riechert, H., . . . Fernández-Garrido, S. (2024). High-temperature growth of GaN nanowires by molecular beam epitaxy: Toward the materials quality of bulk GaN.
Citazione stile Chigago Style (17a edizione)Zettler, J. K., C. Hauswald, P. Corfdir, M. Musolino, L. Geelhaar, H. Riechert, O. Brandt, e S. Fernández-Garrido. High-temperature Growth of GaN Nanowires by Molecular Beam Epitaxy: Toward the Materials Quality of Bulk GaN. 2024.
Citatione MLA (9a ed.)Zettler, J. K., et al. High-temperature Growth of GaN Nanowires by Molecular Beam Epitaxy: Toward the Materials Quality of Bulk GaN. 2024.
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