Cita APA (7a ed.)

John, P., Trampert, A., Van Dinh, D., Spallek, D., Lähnemann, J., Kaganer, V., . . . Auzelle, T. (2024). ScN/GaN($1\bar{1}00$): A new platform for the epitaxy of twin-free metal-semiconductor heterostructures.

Cita Chicago Style (17a ed.)

John, Philipp, Achim Trampert, Duc Van Dinh, Domenik Spallek, Jonas Lähnemann, Vladimir Kaganer, Lutz Geelhaar, Oliver Brandt, y Thomas Auzelle. ScN/GaN($1\bar{1}00$): A New Platform for the Epitaxy of Twin-free Metal-semiconductor Heterostructures. 2024.

Cita MLA (9a ed.)

John, Philipp, et al. ScN/GaN($1\bar{1}00$): A New Platform for the Epitaxy of Twin-free Metal-semiconductor Heterostructures. 2024.