Guardado en:
| Autores principales: | , , , , , , , , , |
|---|---|
| Formato: | Preprint |
| Publicado: |
2024
|
| Materias: | |
| Acceso en línea: | https://arxiv.org/abs/2402.01251 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| _version_ | 1866914073384321024 |
|---|---|
| author | Kaya, Onurcan Kim, Hyeongjoon Kim, Byeongkyu Galvani, Thomas Colombo, Luigi Lanza, Mario Shin, Hyeon-Jin Cole, Ivan Shin, Hyeon Suk Roche, Stephan |
| author_facet | Kaya, Onurcan Kim, Hyeongjoon Kim, Byeongkyu Galvani, Thomas Colombo, Luigi Lanza, Mario Shin, Hyeon-Jin Cole, Ivan Shin, Hyeon Suk Roche, Stephan |
| contents | This study focuses on amorphous boron nitride ($\rm α$-BN) as a novel diffusion barrier for advanced semiconductor technology, particularly addressing the critical challenge of copper diffusion in back-end-of-line (BEOL) interconnects. Owing to its ultralow dielectric constant and robust barrier properties, $\rm α$-BN is examined as an alternative to conventional low-k dielectrics. The investigation primarily employs theoretical modelling, using a Gaussian Approximation Potential, to simulate and understand the atomic-level interactions. This machine learning-based approach allows the performance of realistic simulations of amorphous structure of $\rm α$-BN, enabling the exploration of the impact of different film morphologies on barrier efficacy. Furthermore, we studied the electronic and optical properties of the films using a simple Tight-Binding model. In addition to the theoretical studies, we performed diffusion studies of copper through PECVD $\rm α$-BN on Si. The results from both the theoretical and experimental investigations highlight the potential of $\rm α$-BN as a highly effective diffusion barrier, suitable for integration in nanoelectronics. This research shows that $\rm α$-BN is a promising candidate for BEOL interconnects but also demonstrates the synergy of advanced computational models and experimental methods in material innovation for semiconductor applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2402_01251 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Amorphous Boron Nitride as an Ultrathin Copper Diffusion Barrier for Advanced Interconnects Kaya, Onurcan Kim, Hyeongjoon Kim, Byeongkyu Galvani, Thomas Colombo, Luigi Lanza, Mario Shin, Hyeon-Jin Cole, Ivan Shin, Hyeon Suk Roche, Stephan Materials Science This study focuses on amorphous boron nitride ($\rm α$-BN) as a novel diffusion barrier for advanced semiconductor technology, particularly addressing the critical challenge of copper diffusion in back-end-of-line (BEOL) interconnects. Owing to its ultralow dielectric constant and robust barrier properties, $\rm α$-BN is examined as an alternative to conventional low-k dielectrics. The investigation primarily employs theoretical modelling, using a Gaussian Approximation Potential, to simulate and understand the atomic-level interactions. This machine learning-based approach allows the performance of realistic simulations of amorphous structure of $\rm α$-BN, enabling the exploration of the impact of different film morphologies on barrier efficacy. Furthermore, we studied the electronic and optical properties of the films using a simple Tight-Binding model. In addition to the theoretical studies, we performed diffusion studies of copper through PECVD $\rm α$-BN on Si. The results from both the theoretical and experimental investigations highlight the potential of $\rm α$-BN as a highly effective diffusion barrier, suitable for integration in nanoelectronics. This research shows that $\rm α$-BN is a promising candidate for BEOL interconnects but also demonstrates the synergy of advanced computational models and experimental methods in material innovation for semiconductor applications. |
| title | Amorphous Boron Nitride as an Ultrathin Copper Diffusion Barrier for Advanced Interconnects |
| topic | Materials Science |
| url | https://arxiv.org/abs/2402.01251 |