Cita APA (7a ed.)

Feil, M. W., Weger, M., Reisinger, H., Aichinger, T., Kabakow, A., Waldhör, D., . . . Grasser, T. (2024). Time-Gated Optical Spectroscopy of Field-Effect Stimulated Recombination via Interfacial Point Defects in Fully-Processed Silicon Carbide Power MOSFETs.

Cita Chicago Style (17a ed.)

Feil, Maximilian W., et al. Time-Gated Optical Spectroscopy of Field-Effect Stimulated Recombination via Interfacial Point Defects in Fully-Processed Silicon Carbide Power MOSFETs. 2024.

Cita MLA (9a ed.)

Feil, Maximilian W., et al. Time-Gated Optical Spectroscopy of Field-Effect Stimulated Recombination via Interfacial Point Defects in Fully-Processed Silicon Carbide Power MOSFETs. 2024.