Nazzari, D., Wind, L., Sistani, M., Mayr, D., Kim, K., & Weber, W. M. (2024). Ferroelectrically-enhanced Schottky barrier transistors for Logic-in-Memory applications.
Cita Chicago Style (17a ed.)Nazzari, Daniele, Lukas Wind, Masiar Sistani, Dominik Mayr, Kihye Kim, y Walter M. Weber. Ferroelectrically-enhanced Schottky Barrier Transistors for Logic-in-Memory Applications. 2024.
Cita MLA (9a ed.)Nazzari, Daniele, et al. Ferroelectrically-enhanced Schottky Barrier Transistors for Logic-in-Memory Applications. 2024.
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