Cita APA (7a ed.)

Nazzari, D., Wind, L., Sistani, M., Mayr, D., Kim, K., & Weber, W. M. (2024). Ferroelectrically-enhanced Schottky barrier transistors for Logic-in-Memory applications.

Cita Chicago Style (17a ed.)

Nazzari, Daniele, Lukas Wind, Masiar Sistani, Dominik Mayr, Kihye Kim, y Walter M. Weber. Ferroelectrically-enhanced Schottky Barrier Transistors for Logic-in-Memory Applications. 2024.

Cita MLA (9a ed.)

Nazzari, Daniele, et al. Ferroelectrically-enhanced Schottky Barrier Transistors for Logic-in-Memory Applications. 2024.

Precaución: Estas citas no son 100% exactas.