Das, C., Abhishek, Saikia, D., Gandi, A. N., & Sahu, S. (2024). A Comparison of Electronic, Dielectric, and Thermoelectric Properties of Monolayer of HfX2N4(X = Si, Ge) through First-Principles Calculations.
Chicago Style (17th ed.) CitationDas, Chayan, Abhishek, Dibyajyoti Saikia, Appala Naidu Gandi, and Satyajit Sahu. A Comparison of Electronic, Dielectric, and Thermoelectric Properties of Monolayer of HfX2N4(X = Si, Ge) Through First-Principles Calculations. 2024.
MLA (9th ed.) CitationDas, Chayan, et al. A Comparison of Electronic, Dielectric, and Thermoelectric Properties of Monolayer of HfX2N4(X = Si, Ge) Through First-Principles Calculations. 2024.
Warning: These citations may not always be 100% accurate.