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| Auteurs principaux: | , , , , , , |
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| Format: | Preprint |
| Publié: |
2024
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| Sujets: | |
| Accès en ligne: | https://arxiv.org/abs/2407.07783 |
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| _version_ | 1866915222442213376 |
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| author | Reato, Eros Esteki, Ardeshir Ku, Benny Wang, Zhenxing Heuken, Michael Lemme, Max C. Engström, Olof |
| author_facet | Reato, Eros Esteki, Ardeshir Ku, Benny Wang, Zhenxing Heuken, Michael Lemme, Max C. Engström, Olof |
| contents | A method for assessing the quality of electronic material properties of thin-film metal oxide semiconductor field-effect transistors (MOSFETs) is presented. By investigating samples with MOCVD-grown MoS${_2}$ channels exposed to atmospheric conditions, the existence of electron traps in MoS${_2}$ and at the interface between the gate insulator and the thin-film MoS${_2}$ are revealed. Differential conductance and capacitance data of the transistor channels are plotted as 3D surfaces on a base plane spanned by the measurement frequency versus the gate voltage. The existence of defects is confirmed by comparison with ideal results from a theoretical model. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2407_07783 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Multiparameter admittance spectroscopy for investigating defects in MoS${_2}$ thin film MOSFETs Reato, Eros Esteki, Ardeshir Ku, Benny Wang, Zhenxing Heuken, Michael Lemme, Max C. Engström, Olof Applied Physics A method for assessing the quality of electronic material properties of thin-film metal oxide semiconductor field-effect transistors (MOSFETs) is presented. By investigating samples with MOCVD-grown MoS${_2}$ channels exposed to atmospheric conditions, the existence of electron traps in MoS${_2}$ and at the interface between the gate insulator and the thin-film MoS${_2}$ are revealed. Differential conductance and capacitance data of the transistor channels are plotted as 3D surfaces on a base plane spanned by the measurement frequency versus the gate voltage. The existence of defects is confirmed by comparison with ideal results from a theoretical model. |
| title | Multiparameter admittance spectroscopy for investigating defects in MoS${_2}$ thin film MOSFETs |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2407.07783 |