Style de citation APA (7e éd.)

De, B. K., Sathe, V. G., Divya, Sharma, P., Parate, S. K., Kunwar, H. S., . . . Roy, S. B. (2024). Room temperature Mott transistor based on resistive switching in disordered V2O3 films grown on Si.

Style de citation Chicago (17e éd.)

De, Binoy Krishna, V. G. Sathe, Divya, Pragati Sharma, Shubham Kumar Parate, Hemant Singh Kunwar, Pavan Nukala, et S. B. Roy. Room Temperature Mott Transistor Based on Resistive Switching in Disordered V2O3 Films Grown on Si. 2024.

Style de citation MLA (9e éd.)

De, Binoy Krishna, et al. Room Temperature Mott Transistor Based on Resistive Switching in Disordered V2O3 Films Grown on Si. 2024.