:: Library Catalog

Cover Image

Saved in:

Bibliographic Details
Main Authors:	De, Binoy Krishna, Sathe, V. G., Divya, Sharma, Pragati, Parate, Shubham Kumar, Kunwar, Hemant Singh, Nukala, Pavan, Roy, S. B.
Format:	Preprint
Published:	2024
Subjects:	Materials Science Strongly Correlated Electrons
Online Access:	https://arxiv.org/abs/2407.12507
Tags:	Add Tag No Tags, Be the first to tag this record!

Similar Items

Electric field induced Mott-insulator to metal transition and memristive behaviour in epitaxial V$_2$O$_3$ thin film
by: De, Binoy Krishna, et al.
Published: (2023)

Epitaxial growth and stabilization of perovskite phase EuNiO3 thin films through RF sputtering
by: S, Prashanth, et al.
Published: (2024)

Record cryogenic cooling in ferroelectric hafnia proximity induced via Mott transition
by: A, Jalaja M, et al.
Published: (2024)

Epitaxial Growth and Stabilization of Perovskite Phase EuNiO 3 Thin Films through Rf Sputtering
by: Prashanth S, et al.
Published: (2025)

Wavelength-dependent anisotropic light-matter interaction in 2D ferroelectric In2Se3
by: Jangra, Divya, et al.
Published: (2024)

Large Pyroelectric Enhancement in Freestanding Epitaxial BaTiO3 Membranes on Si
by: Kumar, Ajay, et al.
Published: (2026)

Mott resistive switching initiated by topological defects
by: Milloch, Alessandra, et al.
Published: (2024)

Disorder-driven stochastic dynamics in Mott resistive-switching systems
by: Alspaugh, David J., et al.
Published: (2026)

Field-induced reversible phase transition and negative differential resistance in In2Se3 ferroelectric semiconducting FETs
by: Ghosh, Jishnu, et al.
Published: (2025)

Lattice contraction induced by resistive switching in chromium-doped V2O3: a hallmark of Mott physics
by: Babich, D., et al.
Published: (2021)

A facile vector substrate platform via BaTiO3 membrane transfer enables high quality solution processed epitaxial PZT on silicon
by: Haque, Asraful, et al.
Published: (2025)

Non-Ferroelectric to Ferroelectric Phase Transition in epitaxial Y:HfO$_2$ via Rapid Thermal Annealing Induced Nitrogen Doping
by: Mondal, Soumyajyoti, et al.
Published: (2025)

Structure and magnetism of MnGe thin films grown with a nonmagnetic CrSi template
by: MacNeil, B. D., et al.
Published: (2025)

Topological Triviality of Flat Hamiltonians
by: Sathe, Pratik, et al.
Published: (2023)

Non Fermi liquid signatures across strain engineered metal-insulator transition in line-graph lattices
by: Kunwar, Shashikant Singh, et al.
Published: (2026)

Kagome Hubbard model away from the strong coupling limit: Flat band localization and non Fermi liquid signatures
by: Kunwar, Shashikant Singh, et al.
Published: (2024)

Reversal of strain state in a Mott insulator thin film by controlling substrate morphology
by: Singh, Reetendra, et al.
Published: (2025)

Heterogeneous Integration of High Endurance Ferroelectric and Piezoelectric Epitaxial BaTiO3 Devices on Si
by: Asraful Haque, et al.
Published: (2024)

Heterogeneous integration of high endurance ferroelectric and piezoelectric epitaxial BaTiO$_3$ devices on Si
by: Haque, Asraful, et al.
Published: (2024)

Straintronics across Lieb-Kagome interconversion and variable transport scaling exponents
by: Kunwar, Shashikant Singh, et al.
Published: (2025)

Room temperature Mott metal-insulator transition in V2O3 compounds induced via strain-engineering
by: Homm, P., et al.
Published: (2021)

On the T-linear resistivity of cuprates: theory
by: Dhiman, Charu, et al.
Published: (2025)

Photoinduced phase switching from Mott insulator to metallic state in the quarter-filled Peierls-Hubbard model
by: Shao, Can, et al.
Published: (2024)

Orbital selective Mott transition and magnetic moment in charge density wave heterostructures NbSe$_2/$Ta$X_2$
by: Chatterjee, Joydeep, et al.
Published: (2024)

Clamping effect on temperature-induced valence transition in epitaxial EuPd$_2$Si$_2$ thin films grown on MgO(001)
by: Kölsch, Sebastian, et al.
Published: (2022)

Symmetric topological Mott insulator and Mott semimetal
by: Zhou, Boran, et al.
Published: (2026)

Electronic vs. phononic thermal transport in Cr-doped V2O3 thin films across the Mott transition
by: Mohr, Johannes, et al.
Published: (2024)

Bulk-like Mott-Transition in ultrathin Cr-doped V2O3 films and the influence of its variability on scaled devices
by: Mohr, Johannes, et al.
Published: (2024)

Fragile altermagnetism and orbital disorder in Mott insulator LaTiO$_3$
by: Maznichenko, I. V., et al.
Published: (2024)

Application of Polarized Raman Spectroscopy in Precise Atomic Displacement Detection
by: Vasant G. Sathe, et al.
Published: (2025)

Janus-faced influence of oxygen vacancy in high entropy oxide films with Mott electrons
by: Joshi, Suresh Chandra, et al.
Published: (2025)

Is disorder a friend or a foe to melting of Wigner-Mott insulators?
by: Hammam, Mohammed, et al.
Published: (2025)

Hidden Quantum State and Signature of Mott Transition in Two-dimensional 1T-TaS2
by: Kumar, Vivek, et al.
Published: (2025)

Photoinduced pairing in Mott insulators
by: Ejima, Satoshi, et al.
Published: (2023)

Multipolar ferroelectricity in the Mott regime
by: Zhao, Pengwei, et al.
Published: (2024)

Impurity-induced Mott ring states and Mott zeros ring states in the Hubbard operator formalism
by: Pangburn, Emile, et al.
Published: (2025)

Quantitative determination of the orbital-selective Mott transition and quantum entanglement in the orbital-selective Mott phase
by: Niu, Yuekun, et al.
Published: (2023)

LiV2O4: Hund-Assisted Orbital-Selective Mottness
by: Grundner, Martin, et al.
Published: (2024)

Dimensionality tuning of heavy-fermion states in ultrathin CeSi2 films
by: Wu, Yi, et al.
Published: (2026)

Thermodynamic stability of twisted domains in AgCrSe$_{2}$ thin films grown on lattice-matched YSZ(111) substrate
by: Sato, Haruto, et al.
Published: (2026)