APA (7th ed.) Citation

Morshed, M. G., Vakili, H., Sakib, M. N., Ganguly, S., Stan, M. R., & Ghosh, A. W. (2024). Strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell for energy-efficient Processing in Memory.

Chicago Style (17th ed.) Citation

Morshed, Md Golam, Hamed Vakili, Mohammad Nazmus Sakib, Samiran Ganguly, Mircea R. Stan, and Avik W. Ghosh. Strained Topological Insulator Spin-orbit Torque Random Access Memory (STI-SOTRAM) Bit Cell for Energy-efficient Processing in Memory. 2024.

MLA (9th ed.) Citation

Morshed, Md Golam, et al. Strained Topological Insulator Spin-orbit Torque Random Access Memory (STI-SOTRAM) Bit Cell for Energy-efficient Processing in Memory. 2024.