Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2024
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2407.20925 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866916634576289792 |
|---|---|
| author | Morshed, Md Golam Vakili, Hamed Sakib, Mohammad Nazmus Ganguly, Samiran Stan, Mircea R. Ghosh, Avik W. |
| author_facet | Morshed, Md Golam Vakili, Hamed Sakib, Mohammad Nazmus Ganguly, Samiran Stan, Mircea R. Ghosh, Avik W. |
| contents | We present a novel design of a strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell comprising a piezoelectric/magnet (gating)/topological insulator (TI)/magnet (storage) heterostructure that leverages the TI's high charge-to-spin conversion efficiency coupled with the piezo-induced strain-based gating mechanism for low-power in-memory computing. The piezo-induced strain effectively modulates the conductivity of the topological surface state (TSS) by altering the gating magnet's magnetization from out-to-in-plane, facilitating the storage magnet's spin-orbit torque (SOT) switching. Through comprehensive coupled stochastic Landau-Lifshitz-Gilbert (LLG) simulations, we explore the device dynamics, anisotropy-stress phase space for switching, and write conditions and demonstrate a significant reduction in energy dissipation compared to conventional heavy metal (HM)-based SOT switching. Additionally, we project the energy consumption for in-memory Boolean operations (AND and OR). Our findings suggest the promise of the STI-SOTRAM for low-power, high-performance edge computing. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2407_20925 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell for energy-efficient Processing in Memory Morshed, Md Golam Vakili, Hamed Sakib, Mohammad Nazmus Ganguly, Samiran Stan, Mircea R. Ghosh, Avik W. Mesoscale and Nanoscale Physics We present a novel design of a strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell comprising a piezoelectric/magnet (gating)/topological insulator (TI)/magnet (storage) heterostructure that leverages the TI's high charge-to-spin conversion efficiency coupled with the piezo-induced strain-based gating mechanism for low-power in-memory computing. The piezo-induced strain effectively modulates the conductivity of the topological surface state (TSS) by altering the gating magnet's magnetization from out-to-in-plane, facilitating the storage magnet's spin-orbit torque (SOT) switching. Through comprehensive coupled stochastic Landau-Lifshitz-Gilbert (LLG) simulations, we explore the device dynamics, anisotropy-stress phase space for switching, and write conditions and demonstrate a significant reduction in energy dissipation compared to conventional heavy metal (HM)-based SOT switching. Additionally, we project the energy consumption for in-memory Boolean operations (AND and OR). Our findings suggest the promise of the STI-SOTRAM for low-power, high-performance edge computing. |
| title | Strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell for energy-efficient Processing in Memory |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2407.20925 |