APA (7th ed.) Citation

Markwitz, M., Murmu, P. P., Mori, T., Kennedy, J. V., & Ruck, B. J. (2024). Defect engineering-induced Seebeck coefficient and carrier concentration decoupling in CuI by noble gas ion implantation.

Chicago Style (17th ed.) Citation

Markwitz, Martin, Peter P. Murmu, Takao Mori, John V. Kennedy, and Ben J. Ruck. Defect Engineering-induced Seebeck Coefficient and Carrier Concentration Decoupling in CuI by Noble Gas Ion Implantation. 2024.

MLA (9th ed.) Citation

Markwitz, Martin, et al. Defect Engineering-induced Seebeck Coefficient and Carrier Concentration Decoupling in CuI by Noble Gas Ion Implantation. 2024.