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| Format: | Preprint |
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2024
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| Online Access: | https://arxiv.org/abs/2411.04823 |
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| _version_ | 1866912109292421120 |
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| author | Guo, Xinjing Huang, Menglin Chen, Shiyou |
| author_facet | Guo, Xinjing Huang, Menglin Chen, Shiyou |
| contents | As implemented in the commercialized device modeling software, the four-state nonradiative multi-phonon model has attracted intensive attention in the past decade for describing the physics in negative bias temperature instability (NBTI) and other reliability issues of Si/SiO$_\text{2}$ MOSFET devices. It was proposed initially based on the assumption that the oxygen vacancy defects (V$_\text{O}$) in SiO$_\text{2}$ dielectric layer are bistable in the Si-dimer and back-projected structures during carrier capture and emission. Through high-throughput first-principles structural search, we found V$_\text{O}$ on non-equivalent O sites in amorphous SiO$_\text{2}$ can take 4 types of structural configurations in neutral state and 7 types of configurations in +1 charged state after capturing holes, which produce a wide range of charge-state transition levels for trapping holes. The finding contrasts the structural-bistability assumption and makes the four-state model invalid for most of O sites. To describe the reliability physics accurately, we propose an all-state model to consider all these structural configurations as well as all the carrier capture/emission transitions and thermal transitions between them. With the all-state model, we show that the V$_\text{O}$ defects play important roles in causing NBTI, which challenges the recent studies that discarded V$_\text{O}$ as a possible hole trap in NBTI. Our systematical calculations on the diversified V$_\text{O}$ properties and the all-state model provide the microscopic foundation for describing the reliability physics of MOSFETs and other transistors accurately. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_04823 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Si/SiO$_\text{2}$ MOSFET Reliability Physics: From Four-State Model to All-State Model Guo, Xinjing Huang, Menglin Chen, Shiyou Materials Science Applied Physics As implemented in the commercialized device modeling software, the four-state nonradiative multi-phonon model has attracted intensive attention in the past decade for describing the physics in negative bias temperature instability (NBTI) and other reliability issues of Si/SiO$_\text{2}$ MOSFET devices. It was proposed initially based on the assumption that the oxygen vacancy defects (V$_\text{O}$) in SiO$_\text{2}$ dielectric layer are bistable in the Si-dimer and back-projected structures during carrier capture and emission. Through high-throughput first-principles structural search, we found V$_\text{O}$ on non-equivalent O sites in amorphous SiO$_\text{2}$ can take 4 types of structural configurations in neutral state and 7 types of configurations in +1 charged state after capturing holes, which produce a wide range of charge-state transition levels for trapping holes. The finding contrasts the structural-bistability assumption and makes the four-state model invalid for most of O sites. To describe the reliability physics accurately, we propose an all-state model to consider all these structural configurations as well as all the carrier capture/emission transitions and thermal transitions between them. With the all-state model, we show that the V$_\text{O}$ defects play important roles in causing NBTI, which challenges the recent studies that discarded V$_\text{O}$ as a possible hole trap in NBTI. Our systematical calculations on the diversified V$_\text{O}$ properties and the all-state model provide the microscopic foundation for describing the reliability physics of MOSFETs and other transistors accurately. |
| title | Si/SiO$_\text{2}$ MOSFET Reliability Physics: From Four-State Model to All-State Model |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2411.04823 |