Hu, T., Jia, X., Han, R., Yang, J., Bai, M., Dai, S., . . . Ye, T. (2024). Effect of Top Al$_2$O$_3$ Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al$_2$O$_3$/Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_x$/Si (MIFIS) Gate Structure.
Chicago Style (17th ed.) CitationHu, Tao, et al. Effect of Top Al$_2$O$_3$ Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al$_2$O$_3$/Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_x$/Si (MIFIS) Gate Structure. 2024.
MLA (9th ed.) CitationHu, Tao, et al. Effect of Top Al$_2$O$_3$ Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al$_2$O$_3$/Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_x$/Si (MIFIS) Gate Structure. 2024.
Warning: These citations may not always be 100% accurate.